09N20.pdf 데이터시트 (총 4 페이지) - 파일 다운로드 09N20 데이타시트 다운로드

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Pb Free Plating Product
ISSUED DATE :2005/06/27
REVISED DATE :
GI09N20
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS
RDS(ON)
ID
200V
380m
8.6A
Description
The GI09N20 provide the designer with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The through-hole version (TO-251) is available for low-profile applications.
Features
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
Package Dimensions
TO-251
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
6.40 6.80
5.20 5.50
6.80 7.20
7.20 7.80
2.30 REF.
0.60 0.90
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
0.50 0.70
2.20 2.40
0.45 0.55
0.45 0.60
0.90 1.50
5.40 5.80
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Current, VGS@10V
Continuous Drain Current, VGS@10V
Pulsed Drain Current1
Total Power Dissipation
ID @TC=25
ID @TC=100
IDM
PD @TC=25
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAR
Tj, Tstg
Ratings
200
±30
8.6
5.5
36
69
0.55
40
8.6
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
Thermal Data
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Symbol
Rthj-c
Rthj-a
Value
1.8
110
Unit
/W
/W
GI09N20
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ISSUED DATE :2005/06/27
REVISED DATE :
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
BVDSS
BVDSS / Tj
VGS(th)
gfs
IGSS
200
-
2.0
-
-
--
0.24 -
- 4.0
3.7 -
- ±100
V VGS=0, ID=1mA
V/ Reference to 25 , ID=1mA
V VDS=VGS, ID=250uA
S VDS=10V, ID=5A
nA VGS= ±30V
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=150 )
IDSS
-
-
- 10 uA VDS=200V, VGS=0
- 100 uA VDS=160V, VGS=0
Static Drain-Source On-Resistance
Total Gate Charge3
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RDS(ON)
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
- 380 m VGS=10V, ID=5A
23 37
ID=8.6A
4 - nC VDS=160V
13 -
VGS=10V
12 -
VDD=100V
25 -
ID=8.6A
36
-
ns VGS=10V
RG=10
16 -
RD=11.6
500 800
90 -
40 -
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Reverse Recovery Time
Reverse Recovery Charge
Symbol
VSD
Trr
Qrr
Min.
-
-
-
Typ.
-
225
2260
Max.
1.3
-
-
Unit Test Conditions
V IS=8.6A, VGS=0V
ns IS=8.6A, VGS=0V
nC dI/dt=100A/ s
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=1mH, RG=25 , IAS=8.6A.
3. Pulse width 300us, duty cycle 2%.
GI09N20
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Characteristics Curve
ISSUED DATE :2005/06/27
REVISED DATE :
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
GI09N20
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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ISSUED DATE :2005/06/27
REVISED DATE :
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GI09N20
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