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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC1875
DESCRIPTION
With TO-3 package
High voltage ,high speed
APPLICATIONS
Designed for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
500
6
3.5
10
1.0
50
150
-65~150
UNIT
V
V
V
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
MAX
2.5
UNIT
/W
Free Datasheet http://www.datasheet4u.com/

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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A
VBEsat Base-emitter saturation voltage
IC=2.5A; IB=0.6A
ICES Collector cut-off current
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCE=1500V; VBE=0
VCB=1000V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=10V
hFE-2
DC current gain
IC=2A ; VCE=10V
ts Storage time
tf Fall time
IC=2.5A ; IB1=-IB2=0.6A
Pw=20 s
Product Specification
2SC1875
MIN TYP. MAX UNIT
500 V
10 V
1.2 V
1.0 mA
20 A
20 A
10 35
5 25
10 s
1.0 s
2
Free Datasheet http://www.datasheet4u.com/

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Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SC1875
Fig.2 outline dimensions (unindicated tolerance: 0.1mm)
3
Free Datasheet http://www.datasheet4u.com/