2SA2058.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 2SA2058 데이타시트 다운로드

No Preview Available !

TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2058
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
2SA2058
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.2 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.19 V (max)
High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
(Note)
Tj
Tstg
20
10
7
1.5
2.5
150
500
750
150
55 to 150
V
V
V
A
mA
mW
°C
°C
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm2)
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = −20 V, IE = 0
VEB = −7 V, IC = 0
IC = −10 mA, IB = 0
VCE = −2 V, IC = −0.2 A
VCE = −2 V, IC = −0.6 A
IC = −0.6 A, IB = −20 mA
IC = −0.6 A, IB = −20 mA
VCB = −10 V, IE = 0, f = 1 MHz
See Figure 1 circuit diagram.
VCC ∼− −6 V, RL = 10
IB1 = IB2 = −20 mA
Min Typ. Max Unit
  −100 nA
  −100 nA
10
V
200 500
125
  −0.19 V
  −1.10 V
12 pF
50
115
ns
25
1 2001-10-29

No Preview Available !

20 µs
IB2 IB1
IB1 Input
Duty cycle < 1%
IB2
VCC
Output
Figure 1 Switching Time Test Circuit &
Timing Chart
Marking
2SA2058
WM
2 2001-10-29

No Preview Available !

IC – VCE
2.4
Common emitter
2.0
80 60
40
Ta = 25°C
Single nonrepetitive
pulse
1.6
20
1.2
0.8
0.4
10
8
6
4
IB = −2 mA
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Collector-emitter voltage VCE (V)
2SA2058
10000
hFE – IC
Common emitter
VCE = −2 V
Single nonrepetitive
pulse
1000
100
Ta = 100°C
25
55
10
0.001
0.01
0.1
Collector current IC (A)
1
1
Common emitter
VCE (sat) – IC
IC/IB = 30
Single nonrepetitive pulse
0.1
Ta = 100°C
25
0.01
55
0.001
0.001
0.01
0.1
Collector current IC (A)
1
10
Common emitter
VBE (sat) – IC
IC/IB = 30
Single nonrepetitive pulse
55
1
Ta = 100°C
25
0.1
0.01
0.001
0.01
0.1
Collector current IC (A)
1
2.0
Common emitter
VCE = −2 V
1.6 Single nonrepetitive
pulse
IC – VBE
1.2
0.8
0.4
Ta = 100°C
25 55
0
0 0.4 0.8 1.2 1.6
Base-emitter voltage VBE (V)
3
2001-10-29

No Preview Available !

2SA2058
1000
rth – tw
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
0.1 1 10 100 1000
Pulse width tw (s)
Safe Operating Area
10
IC max (pulsed)
IC max (continuous)
1
DC operation *
(Ta = 25°C)
10 ms1 ms
100 ms*
10 s*
: Single nonrepetitive pulse
Ta = 25°C
0.1 Note that the curves for
100 ms*, 10 s* and DC
operation* will be different when
the devices aren’t mounted on an
FR4 board (glass epoxy, 1.6 mm
thick, Cu area: 645 mm2). These
characteristic curves must be
derated linearly with increase in
0.01 temperature.
0.1
1
10
Collector-emitter voltage VCE (V)
100
4 2001-10-29

No Preview Available !

2SA2058
RESTRICTIONS ON PRODUCT USE
000707EAA
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
5 2001-10-29