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Advanced Power
Electronics Corp.
AP6679GI-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low Gate Charge
Single Drive Requirement
Lower On-resistance
RoHS Compliant
Description
D
G
S
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
BVDSS
RDS(ON)
ID
-30V
9mΩ
-48A
GDS
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Rating
-30
+25
-48
-30
300
31.3
0.25
-55 to 150
-55 to 150
Value
4
65
Units
V
V
A
A
A
W
W/
Units
/W
/W
Data and specifications subject to change without notice
1
200812302
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AP6679GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-30A
VGS=-4.5V, ID=-24A
Gate Threshold Voltage
VDS=VGS, ID=-250uA
Forward Transconductance
VDS=-10V, ID=-30A
Drain-Source Leakage Current
VDS=-30V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=-24V, VGS=0V
Halogen-Free
Total Gate Charge2
VGS= +25, VDS=0V
ID=-30A
Gate-Source Charge
VDS=-25V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=-4.5V
VDS=-15V
Rise Time
ID=-30A
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
Fall Time
RD=0.5Ω
Input Capacitance
VGS=0V
Output Capacitance
VDS=-25V
Reverse Transfer Capacitance
f=1.0MHz
Gate Resistance
f=1.0MHz
-30 - - V
- -0.02 - V/
- - 9 m
- - 15 m
-1 - -3 V
- 43 -
S
- - -1 uA
- - -250 uA
- - +100 nA
- 40 67 nC
- 8 - nC
- 28 - nC
- 15 - ns
- 75 - ns
- 50 - ns
- 90 - ns
- 3100 4590 pF
- 930 - pF
- 690 - pF
- 2.7 4
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-30A, VGS=0V
IS=-24A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.3 V
- 47 - ns
- 45 - nC
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
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280
T C =25 o C
210
-10V
-8.0V
-6.0V
140
-4.5V
70
V G =-3.0V
0
01234
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
35
I D = -24A
T C =25
25
150
T C =150 o C
100
AP6679GI-HF
-10V
-8.0V
-6.0V
-4.5V
50
V G =-3.0V
0
0.0 0.5 1.0 1.5 2.0 2.5
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.8
I D =-30A
V G =-10V
1.4
15 1.0
5
2468
-V GS , Gate-to-Source Voltage (V)
10
Fig 3. On-Resistance v.s. Gate Voltage
30
0.6
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
20
T j =150 o C
10
T j =25 o C
1.2
0.8
0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
0.4
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
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AP6679GI-HF
16
I D = -30A
V DS = -25V
12
8
4
f=1.0MHz
10000
C iss
C1000
oss
C rss
0
0 20 40 60 80
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
1 5 9 13 17 21 25 29
-V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1000
100
100us
1ms
10 10ms
T C =25 o C
Single Pulse
100ms
DC
1
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
Duty factor=0.5
0.2
0.1
0.01
0.00001
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off)tf
VG
-4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
φ
A
c2
L4
L3
b1
L
A1
SYMBOLS
A
A1
b
b1
c
c2
E
L
L3
L4
φ
e
Millimeters
MIN NOM MAX
4.30 4.70 4.90
2.30 2.65 3.00
0.50 0.70 0.90
0.95 1.20 1.50
0.45 0.65 0.80
2.30 2.60 2.90
9.70 10.00 10.40
12.00 --- 15.00
2.91 3.41 3.91
14.70 15.40 16.10
---- 3.20 ----
---- 2.54 ----
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
bc
e
Part Marking Information & Packing : TO-220CFM
LOGO
6679GI
YWWSSS
Part Number
Package Code
Meet Rohs requirement
for low voltage MOSFET only
Date Code (YWWSSS)
YLast Digit Of The Year
WW Week
SSSSequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5
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