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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070
High-Speed Switching Applications
DC-DC Converter Applications
2SA2070
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = -0.1 A)
Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max)
High-speed switching: tf = 70 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
DC
t = 10 s
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC (Note 1)
Tj
Tstg
50
50
7
1.0
2.0
0.1
1.0
2.0
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu
area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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Electrical Characteristics (Ta = 25°C)
2SA2070
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
Cob
tr
tstg
tf
VCB = 50 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.1 A
VCE = 2 V, IC = 0.3 A
IC = 0.3 A, IB = 0.01 A
IC = 0.3 A, IB = 0.01 A
VCB = 10 V, IE = 0, f = 1 MHz
See Figure 1.
VCC 30 V, RL = 100 Ω
IB1 = 10 mA,IB2 = 10 mA
Min Typ. Max Unit
― ― −100 nA
― ― −100 nA
50 ― ― V
200 500
125
― ― −0.20 V
― ― −1.10 V
8 pF
60
280
ns
70
20 μs
IB2 IB1
IB1 Input
Duty cycle < 1%
IB2
VCC
Output
Marking
4C
Lot No.
Part No. (or abbreviation code)
Note 3
Figure 1 Switching Time Test Circuit &
Timing Chart
Note 3: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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1
0.8
100
0.6
IC VCE
50
40
30
20
15
10
0.4
0.2
0
0
5
2
IB = −1mA
0.2
0
0.4
Common emitter
Ta = 25°C
Single nonrepetitive pulse
0.6
0.8
1
1.2
Collector-emitter voltage VCE (V)
2SA2070
5000
hFE IC
3000 Common emitter
VCE = −2 V
Single nonrepetitive pulse
1000
Ta = 100°C
300 25
55
100
30
10
0.001
0.003 0.01 0.03 0. 1 0.3
Collector current IC (A)
1
VCE (sat) IC
5
3 Common emitter
IC/IB = 30
Single nonrepetitive pulse
1
0.3
0.1 Ta = 100°C
0.03
0.01
0.001
25 55
0.003 0.01 0.03 0. 1 0.3
Collector current IC (A)
1
VBE (sat) IC
10
Common emitter
IC/IB = 30
3 Single nonrepetitive pulse
55 25
1
0.3
Ta = 100°C
0.1
0.03
0.001 0.003 0.01 0.03
0.1
0.3
Collector current IC (A)
1
IC – VBE
1
Common emitter
VCE = −2 V
Single nonrepetitive pulse
0.8
0.6
0.4
Ta = 100°C
0.2 25 55
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
3
2010-03-10

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2SA2070
1000
rth – tw
100
10
1
0.001
0.01
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted an on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
2
0.1
1
10 100 1000
Pulse width tw (s)
Safe Operating Area
10
3 IC max (pulsed)*
10 ms* 1 ms* 100 μs* 10 μs*
1 IC max (continuous) 10 s*
0.3
DC operation
(Ta = 25°C)
100 ms*
*: Single nonrepetitive pulse
0.1
Ta = 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
0.03 epoxy, 1.6 mm thick, Cu area:
645 mm2). These characteristic
curves must be derated linearly
with increase in temperature.
0.01
0.1 0.3 1 3
10
30
Collector-emitter voltage VCE (V)
100
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2SA2070
RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
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noncompliance with applicable laws and regulations.
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