2N6098.pdf 데이터시트 (총 3 페이지) - 파일 다운로드 2N6098 데이타시트 다운로드

No Preview Available !

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6098 2N6099 2N6100 2N6101
DESCRIPTION
With TO-220 package
High current capability
APPLICATIONS
For use in general-purpose amplifier
and switching applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
2N6098
VCBO
Collector-base voltage
2N6099
2N6100
2N6101
2N6098
VCEO
2N6099
Collector-emitter voltage
2N6100
2N6101
VEBO
Emitter-base voltage
IC Collector current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
VALUE
70
70
80
80
70
70
80
80
8
10
75
150
-65~150
UNIT
V
V
V
A
W
MAX
1.67
UNIT
/W
Free Datasheet http://www.datasheet4u.com/

No Preview Available !

Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6098 2N6099 2N6100 2N6101
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6098
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6099
2N6100
IC=0.1A ;IB=0
2N6101
VCEsat-1 Collector-emitter saturation voltage
IC=5A;IB=0.5A
VCEsat-2 Collector-emitter saturation voltage
IC=10A;IB=2.5A
2N6098/6099 IC=4A ; VCE=4V
VBE Base-emitter on voltage
2N6100/6101 IC=5A ; VCE=4V
ICBO Collector cut-off current
VCB=Rated VCBO;IE=0
TC=150
IEBO Emitter cut-off current
VEB=8V; IC=0
hFE DC current gain
fT Transition frequency
2N6098/6099 IC=4A ; VCE=4V
2N6100/6101 IC=5A ; VCE=4V
IC=1A ; VCE=10V
MIN TYP. MAX UNIT
70
70
V
80
80
1.3 V
3.5 V
1.3 V
0.5
2.0
mA
1.0 mA
20 80
0.8 MHz
2
Free Datasheet http://www.datasheet4u.com

No Preview Available !

Inchange Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2N6098 2N6099 2N6100 2N6101
Fig.2 Outline dimensions(unindicated tolerance: 0.10 mm)
3
Free Datasheet http://www.datasheet4u.com/