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STW12NK90Z
N-channel 900V - 0.72- 11A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW12NK90Z
VDSS
900V
RDS(on)
<0.88
ID pW
11A 230W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW12NK90Z
Marking
W12NK90Z
Package
TO-247
Packaging
Tube
October 2006
Rev 5
1/14
www.st.com
14
Free Datasheet http://www.datasheet4u.com/

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Contents
Contents
STW12NK90Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
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STW12NK90Z
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM(1)
Ptot
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
VESD(G-S)
EAS (2)
Tstg
Tj
Gate source ESD(HBM-C=100pF, R=1.5KΩ)
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area.
2. ISD 11A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
Value
900
± 30
11
7
44
230
1.85
6000
4.5
-55 to 150
Unit
V
V
A
A
A
W
W/°C
V
mJ
°C
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ Maximum lead temperature for soldering purpose
0.54 °C/W
50 °C/W
300 °C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
11
500
Unit
A
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
BVGSO
Gate-source breakdown
voltage
Igs=± 1mA (open drain)
Min. Typ. Max. Unit
30 V
3/14
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