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SMD Type
TransistIoCrs
Surface Mount PNP Silicon Power Darlington Transistor
KZT127 (CZT127)
Features
High current (max. 5A).
Low voltage (max. 100V).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
power dissipation
Thermal Resistance.Junction-to-Ambient
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Collctor cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
Base to emitter saturation voltage
Output capacitance
Transition frequency
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
123
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
R JA
Tj
Tstg
Rating
-100
-100
-5
-5
-8
-120
2
62.5
150
-65 to +150
Unit
V
V
V
A
A
mA
W
/W
Symbol
Testconditons
VCEO IC=-30mA
ICEO VCE=-50V
ICBO VCB = -100 V
IEBO VEB = -5.0 V
IC =- 500 mA; VCE =-3.0 V
hFE
IC = -3A; VCE = -3.0V
VCE(sat) IC = -3.0A; IB =- 12mA
VBE(sat) IC = -5.0A; IB = -20mA
Cob VCB = -10 V, IE = 0,f=1.0MHz
fT IC= -3A; VCE =-4V; f = 1.0 MHz
Min Typ Max Unit
-100
V
-500
A
-200
A
-2.0 m A
1000
1000
-2.0 V
-4.0 V
300 pF
4.0 MHz
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