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SMD Type
NPN Switching Transistor
KZT2222A
TransistIoCrs
Features
High current (max. 600 mA)
Low voltage (max.40 V).
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
123
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Peak base current
Total power dissipation Ta 25
Storage temperature
Junction temperature
Operating ambient temperature
Thermal resistance from junction to ambient
Thermal resistance from junction to soldering point
Symbol
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
Rth(j-a)
Rth(j-s)
Rating
75
40
6
600
800
200
1
-65 to +150
150
-65 to +150
109
28
Unit
V
V
V
mA
mA
mA
W
K/W
K/W
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SMD Type
TransistIoCrs
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector capacitance
Emitter capacitance
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
Transition frequency
* Pulse test: tp 300 ìs; ä 0.02.
KZT2222A
Symbol
Testconditons
ICBO
IE = 0; VCB = 60 V
IE = 0; VCB = 60 V; Tj = 125
IEBO IC = 0; VEB = 5 V
IC = 0.1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 10 mA; VCE = 10 V
hFE IC = 10 mA; VCE = 10 V;Ta = -55
IC = 150 mA; VCE = 1 V *
IC = 150 mA; VCE = 10 V *
IC = 500 mA; VCE = 10 V *
VCEsat
VBEsat
Cc
Ce
ton
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IE = iE = 0; VCB = 10 V; f = 1 MHz
IC = iC = 0; VEB = 500 mV; f = 1 MHz
ICon = 150 mA; IBon = 15 mA;
IBoff = -15 mA
td
tr
toff
ts
tf
fT IC = 20 mA; VCE = 20 V; f = 100 MHz
Min Typ Max Unit
10 nA
10 A
10 nA
35
50
75
35
50
100 300
40
300 mV
1V
0.6 1.2 V
2V
8 pF
25 pF
35 ns
10 ns
25 ns
250 ns
200 ns
60 ns
300 MHz
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SMD Type
TYPICAL CHARACTERISTICS
DC Current Gain
vs. Collector Current
500
VCE =5V
400
125
300
200 25
100
-40
0
0.1 0.3 1 3 10 30 100 300
Collector Current, IC (mA)
Base-Emitter Saturation Voltage
vs. Collector Current
=10
1
-40
0.8
25
0.6 125
0.4
1 10 100 500
Collector Current, IC (mA)
Collector-Cutoff Current
vs. Ambient Temperature
500
100
VCB=40V
10
1
0.1
25 50 75 100 125 150
Ambient Temperature, TA( )
TransistIoCrs
Collector-Emitter Saturation Voltage
vs. Collector Current
0.4
=10
0.3
125
0.2
25
0.1
-40
1 10 100 500
Collector Current, IC (mA)
Base-Emitter On Voltage
vs. Collector Current
1
VCE =5V
-40
0.8
25
0.6
125
0.4
0.2
0.1
1 10
Collector Current, IC (mA)
25
Emitter Transition and Output
Capacitance vs. Reverse Bias Voltage
20 f=1MHz
16
12 Cte
8 Cob
4
0.1 1 10 100
Reverse Bias Voltage (V)
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SMD Type
TYPICAL CHARACTERISTICS
Turn On and Turn Off Times
vs. Collector Current
400 IB1=IB2=1IC0
320
VCC =25V
240
160
80 tOFF
t ON
0
10 100 1000
Collector Current, IC (mA)
1
0.75
Power Dissipation vs.
Ambient Temperature
0.5
0.25
00 25 50 75 100 125 150
Temperature ( )
TransistIoCrs
Switching Times
vs. Collector Current
400
IB1=IB2=
IC
10
320
VCC =25V
240
tS
160
80 tF tR
tD
0
10 100 1000
Collector Current, IC (mA)
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