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SMD Type
TransistIoCrs
2.0W Surface Mount Complementary
NPN Silicon Power Transistor
KZT3055(CZT3055)
Features
High current (max. 6A).
Low voltage (max. 60V).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector - emitter votage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
power dissipation
Thermal resistance Junction-to-Ambient
Junction temperature
Storage temperature
SOT-223
6.50+0.2
-0.2
Unit: mm
3.50+0.2
-0.2
3.00+0.1
-0.1
4
123
2.9
4.6
0.70+0.1
-0.1
0.90+0.2
-0.2
7.00+0.3
-0.3
1 Base
2 Collector
3 Emitter
4 Collector
Symbol
VCBO
VCER
VCEO
VEBO
IC
IB
PD
R JA
Tj
Tstg
Rating
100
70
60
7
6
3
2
62.5
150
-65 to +150
Unit
V
V
V
V
A
A
W
/W
Electrical Characteristics Ta = 25
Parameter
Collector to emitter breakdown voltage
Collector to emitter breakdown voltage
Collctor cutoff current
Emitter cutoff current
DC current gain
Collector to emitter saturation voltage
Base to emitter ON voltage
Transition frequency
Symbol
Testconditons
VCEO IC=30mA
VCER IC=30mA,RBE=100
ICEO VCE=30V
ICEV VCE=100V,VEB=1.5V
IEBO VEB = 7.0 V
IC = 4.0A; VCE =4.0 V
hFE
IC = 6.0A; VCE = 4.0V
VCE(sat) IC = 4.0A; IB =400mA
VBE(on) VCE=4.0V,IC=4.0A
fT IC= 500mA; VCE =10V; f = 1.0 MHz
Min Typ Max Unit
60 V
70 V
700 A
1.0 mA
5.0 m A
20 70
5.0
1.1 V
1.5 V
2.5 MHz
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