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Advanced Power
Electronics Corp.
AP630GP
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Simple Drive Requirement
Description
G
D
S
TO-220
BVDSS
RDS(ON)
ID
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP630GP) is available for low-profile
applications.
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
EAS
IAR
EAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
200
± 30
9
5.7
36
74
0.59
240
9
7
-55 to 150
-55 to 150
200V
400mΩ
9A
D
S
Units
V
V
A
A
A
W
W/
mJ
A
mJ
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.7
62
Unit
/W
/W
Data & specifications subject to change without notice
200219032
Free Datasheet http://www.datasheet4u.com/

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AP630GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=10V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=150oC)
Gate-Source Forward Leakage
Total Gate Charge3
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
Rise Time
Turn-off Delay Time
Fall Time
VDS=10V, ID=5A
VDS=200V, VGS=0V
VDS=160V, VGS=0V
VGS= ± 30V
ID= 9A
VDS=160V
VGS=10V
VDD=100V
ID= 9A
RG=10Ω,VGS=10V
RD=11Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
200 -
-
- 0.248 -
- - 400
2-4
- 40 -
- - 10
- - 100
- - ±100
- 25 -
- 3.6 -
- 14 -
-8-
- 26 -
- 34 -
- 22 -
- 515 -
- 90 -
- 40 -
V
V/
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage3
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=9A, VGS=0V
Min. Typ. Max. Units
- - 9A
- - 36 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=4.5mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.
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AP630GP
14 T C =25 o C
12
10
8
V G =10V
V G =8.0V
V G =7.0V
V G =6.0V
6
4
V G =5.0V
2
V G =4.0V
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
T C =150 o C
8
6
V G =10V
V G =8.0V
V G =7.0V
V G =6.0V
4 V G =5.0V
2
V G =4.0V
0
0 2 4 6 8 10 12 14
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
3
I D =5A
2.5 V G =10V
2
1.5
1
0.5
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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AP630GP
10
8
6
4
2
0
25 50 75 100 125 150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
80
60
40
20
0
0 50 100 150
Tc , Case Temperature ( o C)
Fig 6. Typical Power Dissipation
100
10us
10
100us
1
T c =25 o C
Single Pulse
0
1 10 100
V DS (V)
1ms
10ms
100ms
1000
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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AP630GP
16
I D =9A
14
12
10
V DS =80V
V DS =120V
V DS =160V
8
6
4
2
0
0 5 10 15 20 25 30
Q G , Total Gate Charge (nC)
35
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1 11 21 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
4
3.5
3
2.5
2
-50 0 50 100 150
T j Junction Temperayure ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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