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Power Transistors
2SB1179, 2SB1179A
Silicon PNP epitaxial planar type darlington
For power amplification and switching
Complementary to 2SD1749, 2SD1749A
Features
High forward current transfer ratio hFE which has satisfactory linearity
High-speed switching
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage
(Emitter open)
2SB1179 VCBO
2SB1179A
60
80
Collector-emitter voltage 2SB1179 VCEO
(Base open)
2SB1179A
60
80
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Ta = 25°C
VEBO
IC
ICP
PC
5
4
8
15
1.3
Junction temperature
Storage temperature
Tj 150
Tstg 55 to +150
Unit
V
V
V
A
A
W
°C
°C
7.0±0.3
3.0±0.2
2.0±0.2
Unit: mm
3.5±0.2
0˚ to 0.15˚
1.1±0.1
0.75±0.1 0.4±0.1
2.3±0.2
4.6±0.4
123
0.9±0.1
0˚ to 0.15˚
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
Internal Connection
C
B
Electrical Characteristics TC = 25°C ± 3°C
E
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage
(Base open)
2SB1179 VCEO
2SB1179A
IC = −30 mA, IB = 0
60
80
V
Base-emitter voltage
Collector-base cutoff
current (Emitter open)
2SB1179
2SB1179A
VBE
ICBO
Collector-emitter cutoff
current (Base open)
2SB1179
2SB1179A
ICEO
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
IEBO
hFE1
hFE2 *
VCE(sat)
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
VCE = −3 V, IC = −3 A
VCB = −60 V, IE = 0
VCB = −80 V, IE = 0
VCE = −40 V, IB = 0
VCE = −40 V, IB = 0
VEB = −5 V, IC = 0
VCE = −3 V, IC = − 0.5 A
VCE = −3 V, IC = −3 A
IC = −3 A, IB = −12 mA
IC = −5 A, IB = −20 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −3 A, IB1 = −12 mA, IB2 = 12 mA
VCC = −50 V
1 000
2 000
2.5 V
200 µA
200
500 µA
500
2 mA
10 000
2 V
4
20 MHz
0.3 µs
2.0 µs
0.5 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE2 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00055AED
1
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2SB1179, 2SB1179A
PC Ta
20
(1)TC=Ta
(2)Without heat sink
(PC=1.3W)
15
10
(1)
5
(2)
0
0 40 80 120 160
Ambient temperature Ta (°C)
IC VCE
6
TC=25˚C
5 IB=–3.0mA
–2.5mA
–2.0mA
4
–1.5mA
–1.0mA
–0.5mA
3
–0.4mA
2 –0.3mA
–0.2mA
1
0
0 1 2 3 4 5
Collector-emitter voltage VCE (V)
IC VBE
10
VCE=–3V
8
6 25˚C
TC=100˚C
–25˚C
4
2
0
0 0.8 1.6 2.4 3.2
Base-emitter voltage VBE (V)
100
10
1
0.1
VCE(sat) IC
IC/IB=250
TC=100˚C
25˚C
–25˚C
hFE IC
106
VCE=–3V
105
TC=100˚C
25˚C
104
–25˚C
103
Cob VCB
104
IE=0
f=1MHz
TC=25˚C
103
102
10
0.01
0.01
0.1
1
Collector current IC (A)
10
102
0.01
0.1
1
Collector current IC (A)
10
1
0.1
1
10 100
Collector-base voltage VCB (V)
Safe operation area
100
Non repetitive pulse
TC=25˚C
10 ICP
IC
1
t=1ms
t=10ms
t=300ms
0.1
103
102
10
1
Rth t
(1)Without heat sink
(2)With a 50×50×2mm Al heat sink
(1)
(2)
0.01
1
10
100
1 000
Collector-emitter voltage VCE (V)
101
104
103
102
101
1
10 102 103 104
Time t (s)
2 SJD00055AED
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
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Even when the products are used within the guaranteed values, take into the consideration of
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2002 JUL
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