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Transys
Electronics
LIMITED
TO-220 Plastic-Encapsulated Transistors
2SB1185 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
2 W (Tamb=25)
Collector current
ICM: -3 A
Collector-base voltage
V(BR)CBO:
-60 V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
TO-220
1. BASE
2. COLLECTOR
3. EMITTER
123
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
Ic=-50µA, IE=0
Ic=-1mA, IB=0
IE=-50µA, IC=0
VCB=-40V, IE=0
VEB=-4V, IC=0
VCE=-3V, IC=-0.5A
IC=-2A, IB=-0.2A
IC=-2A, IB=-0.2A
VCE=-5V, IC=-0.5A, f=30MHz
VCB=-10V, IE=0, f=1MHz
MIN TYP MAX UNIT
-60 V
-50 V
5V
-1 µA
-1 µA
60 320
-1 V
-1.5 V
70 MHz
50 pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
D
60-120
E
100-200
F
160-320
Free Datasheet http://www.datasheet4u.com/