2SB1219.pdf 데이터시트 (총 1 페이지) - 파일 다운로드 2SB1219 데이타시트 다운로드

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SMD Type
TransistIoCrs
Silicon PNP Epitaxial Planar Type
2SB1219
Features
Large collector current IC.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Rating
-30
-25
-5
-1
-500
150
150
-55 to +150
Unit
V
V
V
A
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCBO IC = -10 µA, IE = 0
VCEO IC = -2 mA, IB = 0
VEBO IE = -10 µA, IC = 0
ICBO VCB = -20 V, IE = 0
hFE VCE = -10 V, IC = -150 mA
VCE(sat) IC = -300 mA, IB = -30 mA
VBE(sat) IC = -300 mA, IB = -30 mA
fT VCB = -10 V, IE = 50 mA, f = 200 MHz
Cob VCB = -10 V, IE = 0, f = 1 MHz
Min Typ Max Unit
-30 V
-25 V
-5 V
-0.1 ìA
85 340
-0.35 -0.6 V
-1.1 -1.5
200 MHz
6 15 pF
hFE Classification
Marking
hFE
CQ
85 170
CR
120 240
CS
170 340
C
85 340
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