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Transys
Electronics
LIMITED
SOT-89 Plastic-Encapsulated Transistors
2SB1308 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM:
Collector current
ICM:
Collector-base voltage
V(BR)CBO:
0.5
-3
-30
W (Tamb=25)
A
V
Operating and storage junction temperature range
TJ, Tstg: -55to +150
SOT-89
1. BASE
2. COLLECTOR1
3. EMITTER
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)
Parameter
Symbol
Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
Ic=-50µA , IE=0
IC= -1mA , IB=0
IE=-50µA, IC=0
VCB=-20 V , IE=0
VEB=-5 V , IC=0
-30
-20
-6
-0.5
-0.5
V
V
V
µA
µA
DC current gain
Collector-emitter saturation voltage
Transition frequency
* Measured using pulse current.
CLASSIFICATION OF hFE
Rank
Range
P
82-180
hFE *
VCEsat *
fT
VCE=-2V, IC= -0.5A
IC=-1.5A, IB= -0.15A
VCE= -6V, IC=-50mA
f =30MHz
82 390
-0.45
V
50 MHz
Q
120-270
R
180-390
Marking
BFP,BFQ,BFR
Free Datasheet http://www.datasheet4u.com/