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2SB1 308
TRANSISTOR
SOT-89-3L
FEATURES
z Power Transistor
z Excellent DC current Gain
z Low Collector-emitter Saturation Voltage
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-3
500
250
150
-55~+150
Unit
V
V
V
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-50µA,IE=0
-30
V
V(BR)CEO IC=-1mA,IB=0
-20
V
V(BR)EBO IE=-50µA,IC=0
-6
V
ICBO
VCB=-20V,IE=0
-0.5 µA
IEBO VEB=-5V,IC=0
-0.5 µA
hFE VCE=-2V, IC=-0.5A
82
390
VCE(sat)
IC=-1.5A,IB=-0.15A
-0.45
V
Cob VCB=-20V,IE=0, f=1MHz
60
pF
VCE=-6V,IC=-50mA,
fT f=30MHz
120 MHz
CLASSIFICATION OF hFE
RANK
P
RANGE
82180
MARKING
BFP
Q
120270
BFQ
R
180390
BFR
JinYu
semiconductor
www.htsemi.com
Free Datasheet http://www.datasheet4u.com/