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2SC3322
Silicon NPN Tirple Diffused
Application
High voltage, high speed and high power switching
Outline
TO-3P
1
2
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
IB
PC*1
Tj
Tstg
1. Base
2. Collector
(Flange)
3. Emitter
Ratings
900
800
7
5
10
2.5
80
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
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2SC3322
Electrical Characteristics (Ta = 25°C)
Item
Collector to emitter sustain
voltage
Symbol Min
VCEO(sus)
800
VCEX(sus)
800
Typ
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation
voltage
ICBO
ICEO
hFE1
hFE2
VCE(sat)
Base to emitter saturation
voltage
VBE(sat)
Turn on time
ton
7
15
7
Storage time
Fall time
Note: 1. Pulse test
tstg
tf
Max
Unit
V
V
V
Test conditions
IC = 0.2 A, RBE = , L = 100
mH
IC = 4 A, IB1 = 1.5 A, IB2 = –0.8
A, VBE = –5.0 V, L = 180 µH,
Clamped
IE = 10 mA, IC = 0
100 µA
100 µA
1.0 V
VCB = 750 V, IE = 0
VCE = 650 V, RBE =
VCE = 5 V, IC = 0.5 A*1
VCE = 5 V, IC = 3 A*1
IC = 1.5 A, IB = 0.3 A*1
1.5 V
1.0 µs
3.0 µs
1.0 µs
IC = 3 A, IB1 = 0.6 A,
IB2 = –1.5 A, VCC 250 V
2
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Maximum Collector Dissipation Curve
120
80
40
0 50 100
Case Temperature TC (°C)
Area of Safe Operation
10 iC (peak)
IC (max)
1.0
150
0.1
0.01
Ta = 25°C, 1 Shot Pulse
0.001
1 3 10 30 100 300 1,000
Collector to emitter Voltage VCE (V)
Collector Current Derating Rate
100
80 IS/B Limit Area
60
40
20
0 50 100 150
Case temperature TC (°C)
Transient Thermal Resistance
10
3
1.0
0.3
0.1
0.03
0.01
0.01
0.01
10 ms–10 s
10 µs–10 ms
0.1 1.0
0.1 1.0
Time t
10 (s)
10 (ms)
2SC3322
3
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2SC3322
4
Reverse Bias Area of Safe Operation
10 600 V, 10 A
8
6
4 800 V, 4 A
2 850 V, 1.5 A
IB2 = –0.8 A
0
0 200 400 600 800 1,000
Collector to emitter Voltage VCE (V)
1.000
Collector to Emitter Voltage
vs. Base to Emitter Resistance
IC = 1 mA
900
800
700
100 1 k 10 k 100 k 1 M
Base to emitter resistance RBE ()
Typical Output Characteristics
5
1.0 A
0.8 A
4 0.6 A
3 0.4 A
2 0.2 A
0.1 A
1 0.05 A
IB = 0
TC = 25°C
0 12345
Collector to emitter Voltage VCE (V)
Typical Transfer Characteristics
5
TC = 25°C
VCE = 5 V
4
3
2
1
0 0.4 0.8 1.2 1.6 2.0
Base to emitter voltage VBE (V)
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DC Current Transfer Ratio vs.
Collector Current
100
50
75°C
20 25°C
TC = –25°C
10
5
2
VCE = 5 V
1
0.01 0.03 0.1 0.3 1.0 3
10
Collector current IC (A)
Collector to Emitter Saturation
Voltage vs. Base Current
10
TC = 25°C
3
2.5 A
1.0
1.5 A
0.3
0.1
IC = 0.5 A
0.03
0.01
0.01 0.03 0.1 0.3 1.0 3
Base current IB (A)
10
Saturation Voltage vs. Collector Current
10
3
1.0 VBE (sat)
0.3
0.1 VCE (sat)
0.03
TC = 25°C
0.01
0.01 0.03 0.1 0.3
lC = 5 lB
1.0 3 10
Collector current IC (A)
2SC3322
5
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