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DUAL TRANSISTOR (NPN+ NPN)
Features
z Small package (dual type)
z High voltage and high current
z High hFE, excellent hFE linearity
z Complementary to 2SA1873
Marking: LY LGR
2SC4944
SOT-353
1
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
200
150
-55 to150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=100μA,IE=0
IC=1mA,IB=0
IE=100μA,IC=0
VCB=60V,IE=0
VEB=5V,IC=0
VCE=6V,IC=2mA
IC=100mA,IB=10mA
VCE=10V,IC=1mA
VCB=10V,IE=0,f=1MHz
Min
60
50
5
120
80
Units
V
V
V
mA
mW
Typ Max Unit
V
V
V
0.1 μA
0.1 μA
400
0.25 V
MHz
3.5 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
Y
120-240
LY
GR
200-400
LGR
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
Free Datasheet http://www.datasheet4u.com/