2SC4984.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SC4984 데이타시트 다운로드

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SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC4984
Features
Large current capacity.
Low collector-to-emitter saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation,mounted on ceramic
board(250mm2X0.8mm)
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
15
15
5
1.5
3
300
1.3
150
-55 to +150
Unit
V
V
V
A
A
mA
W
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Free Datasheet http://www.datasheet4u.com

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SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
2SC4984
Symbol
Testconditons
ICBO VCB = 12 V, IE=0
IEBO VEB = 4 V, IC=0
hFE VCE = 2V , IC = 50mA
fT VCE = 2V , IC = 50mA
Cob VCB = 10V , f = 1.0MHz
IC = 5 mA , IB = 0.5 mA
VCE(sat)
IC = 500 mA , IB = 25 mA
VBE(sat) IC = 500 mA , IB = 25 mA
V(BR)CBO IC = 10ìA , IE = 0
V(BR)CEO IC = 1mA , RBE =
V(BR)EBO IE = 10ìA , IC = 0
hFE Classification
Marking
Rank
hFE
S
140 280
CT
T
200 400
U
280 560
Transistors
Min Typ Max Unit
100 nA
100 nA
140 560
200 MHz
10 pF
10 25 mV
120 240
0.9 1.2 mV
15 V
15 V
5V
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Free Datasheet http://www.datasheet4u.com/