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Regarding the change of names mentioned in the document, such as Hitachi
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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2SC5050
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 11 GHz Typ
High gain, low noise figure
PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz
Outline
MPAK
ADE-208-1130A (Z)
2nd. Edition
Mar. 2001
3
1
2
1. Emitter
2. Base
3. Collector
Note:
Marking is “YZ–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
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2SC5050
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
15
8
1.5
50
150
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
S21 Parameter
Symbol Min
V(BR)CBO
15
I CBO
I CEO
I EBO
hFE
Cob
fT
|S21|
50
8.0
Power gain
PG 11.0
Noise figure
NF —
Typ
120
0.6
11.0
13.5
14.0
1.1
Max
10
1
10
250
1.1
2.0
Unit
V
µA
mA
µA
pF
GHz
dB
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 12 V, IE = 0
VCE = 8 V, RBE =
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 20 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA,
f = 1000 MHz
VCE = 5 V, IC = 20 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
See characteristic curves of 2SC4926.
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Maximum Collector Dissipation Curve
150
100
50
0 50 100 150
Ambient Temperature Ta (°C)
2SC5050
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