2SC5161.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SC5161 데이타시트 다운로드

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SMD Type
Transistors
High Voltage Switching Transistor
2SC5161
Features
Low VCE(sat).
VCE(sat) = 0.15V (Typ.),IC / IB = 1A / 0.2A
High breakdown voltage.VCEO = 400V
Fast switching.tr = 1.0ìs,IC = 0.8A
NPN silicon transistor
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current *
Collector current
Collector power dissipation TC = 25
Ta = 25
Junction temperature
Storage temperature
* Single pulse pw=10ms
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Base
2 Collector
3 Emitter
Symbol
VCBO
VCES
VEBO
ICP
IC
PC
Tj
Tstg
Rating
400
400
7
4
2
10
1
150
-55 to +150
Unit
V
V
V
A(Puse)
A(DC)
W
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Free Datasheet http://www.datasheet4u.com/

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SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
collector-emitter breakdown voltage
collector-emitter voltage
Emitter-base breakdown voltage
collecotr cutoff current
Emitter cutoff current
Collector to emitter saturation voltage
Base to emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
2SC5161
Symbol
BVCBO
BVCEO
VCEO(SUS)
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
cob
ton
tstg
tf
Testconditons
IC=50ìA
IC=1mA
IC=1.0A,IB1=0.1A,L=1mH
IE=50ìA
VCB=400V
VEB=7V
IC/IB=1A/0.2A
IC/IB=1A/0.2A
VCE=5V,IC=0.1A
VCE=10V.IE=-0.1A.f=5MHz
VCB=10V,IE=0A,f=1MHz
IC=0.8A,RL=250Ù
IB1=-IB2=0.08A
VCC=200V
hFE Classification
ltem B
hFE 25 to 50
Transistors
Min Typ Max Unit
400 V
400 V
400 V
7V
10 ìA
10 ìA
1V
1.5 V
25 50
10 MHz
30 pF
1 ìs
2.5 ìs
1 ìs
2 www.kexin.com.cn
Free Datasheet http://www.datasheet4u.com/