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SGB10N60A
Fast IGBT in NPT-technology
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2
Type
SGB10N60A
VCE
IC VCE(sat)
Tj
Marking
Package
600V 10A
2.3V
150°C G10N60A PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Gate-emitter voltage
Avalanche energy, single pulse
IC = 10 A, VCC = 50 V, RGE = 25 ,
start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature (reflow soldering MSL1)
Symbol
VCE
IC
ICpuls
-
VGE
EAS
tSC
Ptot
Tj , Tstg
Value
600
20
10.6
40
40
±20
70
Unit
V
A
V
mJ
10
92
-55...+150
245
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 July 07
Free Datasheet http://www.datasheet4u.com/

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SGB10N60A
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient1)
Symbol
RthJC
RthJA
Conditions
Max. Value
1.35
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
V(BR)CES
VCE(sat)
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
IC(SC)
VGE=0V, IC=500µA
VGE = 15V, IC=10A
Tj=25°C
Tj=150°C
IC=300µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=10A
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=10A
VGE=15V
VGE=15V,tSC10µs
VCC 600V,
Tj 150°C
min.
600
1.7
-
3
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
4
-
-
-
6.7
550
62
42
52
7
100
Unit
max.
-V
2.4
2.8
5
40
1500
100
-
µA
nA
S
660 pF
75
51
68 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2 Rev. 2.3 July 07
Free Datasheet http://www.datasheet4u.com/

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SGB10N60A
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C,
VCC=400V,IC=10A,
VGE=0/15V,
RG=25,
CL σσ11))
=180nH,
=55pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
178
24
0.15
0.17
0.320
34
15
214
29
0.173
0.221
0.394
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=400V,IC=10A,
VGE=0/15V,
RG=25
CL σσ11))
=180nH,
=55pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
198
26
0.260
0.280
0.540
34
15
238
32
0.299
0.364
0.663
ns
mJ
1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3 Rev. 2.3 July 07
Free Datasheet http://www.datasheet4u.com/