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September 2009
H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers
Features
Bi-polar emitter input
Built-in reverse polarity input protection
Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
VDE approved File #102497 (ordering option ‘V’)
Applications
AC line monitor
Unknown polarity DC sensor
Telephone line interface
Description
The H11AAXM series consists of two gallium-arsenide
infrared emitting diodes connected in inverse parallel
driving a single silicon phototransistor output.
Schematic
1
2
3
6 BASE
5 COLL
4 EMITTER
Package Outlines
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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Absolute Maximum Ratings (TA =25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation
Derate Linearly From 25°C
EMITTER
IF
IF(pk)
PD
Continuous Forward Current
Forward Current – Peak (1µs pulse, 300 pps)
LED Power Dissipation
Derate Linearly From 25°C
DETECTOR
IC Continuous Collector Current
PD Detector Power Dissipation
Derate linearity from 25°C
Device
Value
Units
All -40 to +150 °C
All -40 to +100 °C
All 260 for 10 sec °C
All 250 mW
2.94 mW/°C
All 60 mA
All ±1.0
A
All 120 mW
1.41 mW/°C
All 50 mA
All 150 mW
1.76 mW/°C
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
2
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
EMITTER
VF Input Forward Voltage
CJ Capacitance
DETECTOR
BVCEO Breakdown Voltage
Collector to Emitter
BVCBO
BVEBO
BVECO
ICEO
Collector to Base
Emitter to Base
Emitter to Collector
Leakage Current
Collector to Emitter
IF = ±10mA
VF = 0 V, f = 1.0MHz
IC = 1.0mA, IF = 0
IC = 100µA, IF = 0
IE = 100µA, IF = 0
IE = 100µA, IF = 0
VCE = 10 V, IF = 0
CCE Capacitance Collector
to Emitter
CCB Collector to Base
CEB Emitter to Base
*Typical values at TA = 25°C
VCE = 0, f = 1MHz
VCB = 0, f = 1MHz
VEB = 0, f = 1MHz
All
All
All
All
All
All
H11AA1M
H11AA3M
H11AA4M
H11AA2M
All
All
All
30
70
5
7
Typ.*
1.17
80
100
120
10
10
1
1
10
80
15
Max. Unit
1.5 V
pF
V
V
V
V
50 nA
200
pF
pF
pF
Transfer Characteristics
Symbol Characteristics
CTRCE Current Transfer Ratio,
Collector to Emitter
VCE(SAT)
Current Transfer Ratio,
Symmetry
Saturation Voltage,
Collector to Emitter
Test Conditions
IF = ±10mA, VCE = 10V
IF = ±10mA, VCE = 10V
(Figure 11)
IF = ±10mA, ICE = 0.5mA
Device
H11AA4M
H11AA3M
H11AA1M
H11AA2M
All
All
Min.
100
50
20
10
.33
Typ.* Max. Units
%
3.0
.40 V
Isolation Characteristics
Symbol
Characteristic
CI-O Package Capacitance
Input/Output
VISO
RISO
Isolation Voltage
Isolation Resistance
*Typical values at TA = 25°C
Test Conditions
VI-O = 0, f = 1MHz
f = 60Hz, t = 1 sec.
VI-O = 500 VDC
Min.
7500
1011
Typ.*
0.7
Max.
Units
pF
Vac(pk)
©2006 Fairchild Semiconductor Corporation
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3
3
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/