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Transistors
2SA2046
Silicon PNP epitaxial planer type
For DC-DC converter
I Features
Low collector to emitter saturation voltage VCE(sat)
Mini3-G1 type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
30
20
5
5
1.5
400
150
55 to +150
V
V
V
A
A
mW
°C
°C
Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 mm3
1.45
0.40+00..1005
3
Unit: mm
0.16+00..1006
12
0.95 0.95
1.90±0.20
2.90+00..2005
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Type Package
Marking Symbol: 3Z
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *
Collector to emitter saturation voltage *
Collector output capacitance
Transition frequency
Symbol
VCBO
VCEO
VEBO
hFE
VCE(sat)
Cob
fT
Conditions
IC = −10 µA, IE = 0
IC = −1 mA, IB = 0
IE = −10 µA, , IC = 0
VCE = −2 V, IC = −100 mA
IC = −500 mA, IB = −25 mA
VCB = −10 V, IE = 0, f = 1 MHz
VCB = −10 V, IE = 20 mA
f = 200 MHz
Note) *: Pulse measurement
Min Typ Max Unit
30 V
20 V
5 V
160 560
50 150 mV
25 35
pF
170 MHz
1
Free Datasheet http://www.datasheet4u.com/