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2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
TO-220F15
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
VDS
ID
ID(puls]
VGS
EAV *1
PD
Tch
Tstg
Rating
Unit
60
±45
±180
±30
461.9
40
+150
-55 to +150
V
A
A
V
mJ
W
°C
°C
*1 L=0.304mH, Vcc=24V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Drain-source breakdown voltaget
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA VGS=0V
ID=10mA VDS=VGS
VDS=60V
VGS=0V
VGS=±30V VDS=0V
ID=22.5A VGS=10V
ID=22.5A VDS=25V
VDS=25V
VGS=0V
f=1MHz
VCC=30V ID=45A
VGS=10V
RGS=10
Tch=25°C
Tch=125°C
L=100 µH Tch=25°C
IF=45A VGS=0V Tch=25°C
IF=45A VGS=0V
-di/dt=100A/µs Tch=25°C
Min. Typ. Max. Units
60
2.5 3.0
10
0.2
10
12.0
10.0 25.0
2300
910
260
18
55
70
48
45
1.0
60
0.11
3.5
500
1.0
100
14.5
3450
1370
390
30
80
120
80
1.5
V
V
µA
mA
nA
m
S
pF
ns
A
V
ns
µC
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(ch-c)
Rth(ch-a)
Test Conditions
channel to case
channel to ambient
Min. Typ.
Max. Units
3.125 °C/W
62.5 °C/W
1
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2SK2902-01MR
Characteristics
Power Dissipation
PD=f(Tc)
50
40
30
20
10
0
0 50 100
Tc [°C]
Typical output characteristics
ID=f(VDS):80µs pulse test,Tc=25°C
100
VGS=20V
10V
80
8V
6V
5.5V
60
150
5V
40
4.5V
20 4.0V
3.5V
0
012345
VDS [V]
Typical forward transconductance
gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C
102
101
100100
101
ID [A]
102
FUJI POWER MOSFET
Safe operating area
ID=f(VDS):D=0.01,Tc=25°C
103
102
D.C.
101
100
101-10-1
t
t
D=
T
T
100
101
VDS [V]
t=
1µs
10µs
100µs
1ms
10ms
100ms
102 103
Typical transfer characteristics
ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C
100
10
1
0.1 0 2 4 6 8
VGS [V]
Typical Drain-Source on-State Resistance
RDS(on)=f(ID):80µs pulse test,Tch=25°C
50 VGS=
3.5V 4.0V
4.5V
5.0V
40
10
30
5.5V
20 6V
8V
10V
10 20V
00 20 40 60 80 100
ID [A]
2
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2SK2902-01MR
FUJI POWER MOSFET
Drain-source on-state resistance
RDS(on)=f(Tch):ID=22.5A,VGS=10V
35
30
25
20 max.
15
typ.
10
5
0
-50
0 50
Tch [°C]
100
150
Typical Gate Charge Characteristics
VGS=f(Qg):ID=45A,Tch=25°C
50
VDS
VGS
40
Vcc=48V
30V
30
12V
25
20
15
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=10mA
5.0
4.5
4.0
3.5
max.
3.0
typ.
2.5
min.
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tch [°C]
Typical capacitances
C=f(VDS):VGS=0V,f=1MHz
10n
Ciss
1n
Coss
20 10
Crss
100p
10 5
00
0 20 40 60 80 100 120 140
Qg [nC]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80µs pulse test,Tch=25°C
110
100
90
80
70
60
50
10V
40
5V VGS=0V
30
20
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD [V]
10p10-2
10-1
100
VDS [V]
101
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=30V,VGS=10V,RG=10
104
102
103
102
101
10-1
100
ID [A]
td(off)
tf
tr
td(on)
101
102
3
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2SK2902-01MR
FUJI POWER MOSFET
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch)
50
Transient thermal impedance
Zthch=f(t) parameter:D=t/T
101
40 0.5
100 0.2
0.1
30
0.05
10-1 0.02
20 t
0.01
t
D=
T
T
0
10 10-12 0-5 10-4 10-3 10-2 10-1 100 101
t [s]
0
0 50 100 150
Starting Tch [°C]
Maximum Avalanche energy vs. starting Tch
Eas=f(starting Tch):Vcc=24V, I(AV)<=45A
500
400
300
200
100
0
0 50 100 150
Starting Tch [°C]
4
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