UT120N03.pdf 데이터시트 (총 6 페이지) - 파일 다운로드 UT120N03 데이타시트 다운로드

No Preview Available !

UNISONIC TECHNOLOGIES CO., LTD
UT120N03
Preliminary
120A, 30V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC UT120N03 is a N-channel power MOSFET using UTC’s
advanced trench technology to provide customers with a minimum
on-state resistance and superior switching performance.
The UTC UT120N03 is generally applied in DC to DC convertors
or synchronous rectifications.
„ FEATURES
* ID = 120A
* VDS=30V
* RDS(ON)=3.8m@ VGS=10V
* Low Gate Charge (Typical 54nC)
* Fast Switching
* 100% Avalanche Tested
* High Power and Current Handling Capability
„ SYMBOL
2.Drain
1
TO-220
1.Gate
3.Source
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
UT120N03L-TA3-T UT120N03G-TA3-T
TO-220
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
12
GD
3
S
Packing
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-581.a
Free Datasheet http://www.datasheet4u.com/

No Preview Available !

UT120N03
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
30 V
±20 V
Drain Current
Continuous
Pulsed (Note 2)
ID
IDM
120 A
480 A
Single Pulsed Avalanche Energy (Note 3)
Peak Diode Recovery dv/dt (Note 4)
EAS
dv/dt
240 mJ
6.0 V/ns
Power Dissipation (TC=25°C)
Junction Temperature
PD 125 W
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 0.61mH, IAS = 28A, VDD = 27V, RG = 25, Starting TJ = 25°C
4. ISD 80A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
5. Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 100A.
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
62.5
1
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-581.a
Free Datasheet http://www.datash

No Preview Available !

UT120N03
Preliminary
„ ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS ID=250µA, VGS=0V, TC=25°C
BVDSS/TJ Reference to 25°C, ID=250µA
Drain-Source Leakage Current
Gate- Source Leakage Current
Forward
Reverse
IDSS VDS=30V, VGS=0V
IGSS
VGS=+20V, VDS=0V
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=35A
VGS=4.5V, ID=35A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
QGS
QGD
VGS=5V, VDS=15V, ID=35A
(Note 1, 2)
Turn-ON Delay Time
tD(ON)
Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=15V, ID=35A, RG=4.7,
VGS=5V (Note 1, 2)
Fall-Time
tF
Gate Resistance
Rg
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
Maximum Body-Diode Continuous Current
VSD IS=120A, VGS=0V
IS
Maximum Body-Diode Pulsed Current
ISM
Notes: 1. Pulse Test: Pulse width 300µs, Duty cycle 2%
2. Essentially independent of operating temperature
Power MOSFET
MIN TYP MAX UNIT
30 V
mV/°C
1
0.02 100
-0.02 -100
μA
nA
nA
1.0 3.0 V
3.8 m
6.4 m
2990
585
340
pF
pF
pF
54 72
8.0
10
9
96
47
37
2.0
nC
nC
nC
ns
ns
ns
ns
1.25 V
120 A
480 A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-581.a
Free
Datash

No Preview Available !

UT120N03
Preliminary
„ TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 6
QW-R502-581.a
Free Datasheet http://www.datasheet4u.com/

No Preview Available !

UT120N03
Preliminary
„ TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-581.a
Free Datasheet http://www.datasheet4u.com/