FSD146MRBN.pdf 데이터시트 (총 16 페이지) - 파일 다운로드 FSD146MRBN 데이타시트 다운로드

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October 2011
FSD146MRBN
Green-Mode Fairchild Power Switch (FPS™)
Features
Advanced Soft Burst-Mode Operation for
Low Standby Power and Low Audible Noise
Random Frequency Fluctuation for Low EMI
Pulse-by-Pulse Current Limit
Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD) with Hysteresis, Output-Short
Protection (OSP), and Under-Voltage Lockout
(UVLO) with Hysteresis
Low Operating Current (0.4mA) in Burst Mode
Internal Startup Circuit
Internal High-Voltage SenseFET: 650V
Built-in Soft-Start: 15ms
Auto-Restart Mode
Description
The FSD146MRBN is an integrated Pulse Width
Modulation (PWM) controller and SenseFET designed
for offline Switch-Mode Power Supplies (SMPS) with
minimal external components. The PWM controller
includes an integrated fixed-frequency oscillator, Under-
Voltage Lockout (UVLO), Leading-Edge Blanking (LEB),
optimized gate driver, internal soft-start, temperature-
compensated precise current sources for loop
compensation, and self-protection circuitry. Compared
with a discrete MOSFET and PWM controller solution,
the FSD146MRBN can reduce total cost, component
count, size, and weight; while simultaneously increasing
efficiency, productivity, and system reliability. This
device provides a basic platform that is well suited for
cost-effective design of a flyback converter.
Applications
Power Supply for LCD Monitor, STB, and
DVD Combination
Ordering Information
Part
Number
Output Power Table(2)
Package
Operating
Junction
Temperature
Current
Limit
RDS(ON)
(Max.)
230VAC ± 15%(3)
Adapter(4)
Open
Frame(5)
85-265VAC
Adapter(4)
Open
Frame(5)
Replaces
Device
FSD146MRBN 8-DIP
-40°C ~
+125°C
1.50A 2.6
23W
35W
17W
26W FSFM260N
Notes:
1. Lead-free package per JEDEC J-STD-020B.
2. The junction temperature can limit the maximum output power.
3. 230VAC or 100/115VAC with voltage doubler.
4. Typical continuous power in a non-ventilated enclosed adapter measured at 50C ambient temperature.
5. Maximum practical continuous power in an open-frame design at 50C ambient temperature.
© 2011 Fairchild Semiconductor Corporation
FSD146MRBN • Rev. 1.0.0
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/

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Application Circuit
Figure 1. Typical Application Circuit
Internal Block Diagram
© 2011 Fairchild Semiconductor Corporation
FSD146MRBN • Rev. 1.0.0
Figure 2. Internal Block Diagram
2
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Pin Configuration
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin #
1
2
3
4
5, 6, 7, 8
Name
GND
VCC
FB
N.C.
Drain
Description
Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply input, which provides the internal operating
current for both startup and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator.
The collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor
should be placed between this pin and GND. If the voltage of this pin reaches 7.0V, the
overload protection triggers, which shuts down the FPS™.
No Connection
SenseFET Drain. High-voltage power SenseFET drain connection.
© 2011 Fairchild Semiconductor Corporation
FSD146MRBN • Rev. 1.0.0
3
www.fairchildsemi.com
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VDS Drain Pin Voltage
VCC VCC Pin Voltage
VFB Feedback Pin Voltage
IDM Drain Current Pulsed
IDS Continuous Switching Drain Current(6)
EAS Single Pulsed Avalanche Energy(7)
PD Total Power Dissipation (TC=25C)(8)
Maximum Junction Temperature
TJ Operating Junction Temperature(9)
TC=25C
TC=100C
-0.3
-40
650
26
10.0
3.4
1.7
1.1
250
1.5
150
+125
V
V
V
A
A
A
mJ
W
C
C
TSTG Storage Temperature
-55 +150
C
ESD
Electrostatic
Human Body Model, JESD22-A114
Discharge Capability Charged Device Model, JESD22-C101
5
kV
2
Notes:
6. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.73)
and junction temperature (see Figure 4).
7. L=45mH, starting TJ=25C.
8. Infinite cooling condition (refer to the SEMI G30-88).
9. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
Figure 4. Repetitive Peak Switching Current
Thermal Impedance
TA=25°C unless otherwise specified.
Symbol
Parameter
Value
Unit
θJA Junction-to-Ambient Thermal Impedance(10)
ΨJL Junction-to-Lead Thermal Impedance(11)
85 °C/W
11 °C/W
Notes:
10. JEDEC recommended environment, JESD51-2, and test board, JESD51-10, with minimum land pattern.
11. Measured on the SOURCE pin #7, close to the plastic interface.
© 2011 Fairchild Semiconductor Corporation
FSD146MRBN • Rev. 1.0.0
4
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Electrical Characteristics
TJ = 25C unless otherwise specified.
Symbol
Parameter
SenseFET Section
BVDSS Drain-Source Breakdown Voltage
IDSS Zero-Gate-Voltage Drain Current
RDS(ON)
CISS
COSS
Drain-Source On-State Resistance
Input Capacitance(12)
Output Capacitance(12)
tr Rise Time
tf Fall Time
td(on)
Turn-On Delay
td(off)
Turn-Off Delay
Control Section
fS Switching Frequency(12)
fS Switching Frequency Variation(12)
DMAX Maximum Duty Ratio
DMIN
Minimum Duty Ratio
IFB Feedback Source Current
VSTART
VSTOP
UVLO Threshold Voltage
tS/S Internal Soft-Start Time
VRECOMM Recommended VCC Range
Burst-Mode Section
VBURH
VBURL Burst-Mode Voltage
VHYS
Protection Section
ILIM
VSD
IDELAY
tLEB
VOVP
tOSP
VOSP
tOSP_FB
TSD
THYS
Peak Drain Current Limit
Shutdown Feedback Voltage
Shutdown Delay Current
Leading-Edge Blanking Time(12,14)
Over-Voltage Protection
Output-Short
Protection(12)
Threshold Time
Threshold VFB
VFB Blanking Time
Thermal Shutdown Temperature(12)
Conditions
VCC = 0V, ID = 250A
VDS = 650V, TA = 25C
VGS=10V, ID =1A
VDS = 25V, VGS = 0V, f=1MHz
VDS = 25V, VGS = 0V, f=1MHz
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID = 4A, RG=25
VDS = 325V, ID= 4A, RG=25
VCC = 14V, VFB = 4V
-25C < TJ < 125C
VCC = 14V, VFB = 4V
VCC = 14V, VFB = 0V
VFB = 0
VFB = 0V, VCC Sweep
After Turn-On, VFB = 0V
VSTR = 40V, VCC Sweep
VCC = 14V, VFB Sweep
di/dt = 300mA/s
VCC = 14V, VFB Sweep
VCC = 14V, VFB = 4V
VCC Sweep
OSP Triggered when
tON<tOSP & VFB>VOSP
(Lasts Longer than tOSP_FB)
Shutdown Temperature
Hysteresis
Min.
650
61
61
65
11
7.0
13
0.45
0.30
1.35
6.45
1.2
23.0
0.7
1.8
2.0
125
Typ.
2.1
436
65
24
24
13
30
67
±5
67
90
12
7.5
15
0.50
0.35
150
1.50
7.00
2.0
300
24.5
1.0
2.0
2.5
135
60
Max.
250
2.6
73
±10
73
0
115
13
8.0
23
0.55
0.40
1.65
7.55
2.8
26.0
1.3
2.2
3.0
145
Unit
V
A
pF
pF
ns
ns
ns
ns
kHz
%
%
%
A
V
V
ms
V
V
V
mV
A
V
A
ns
V
s
V
s
C
C
Continued on the following page…
© 2011 Fairchild Semiconductor Corporation
FSD146MRBN • Rev. 1.0.0
5
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/