2SJ600.pdf 데이터시트 (총 2 페이지) - 파일 다운로드 2SJ600 데이타시트 다운로드

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SMD Type
MOSFICET
MOS Field Effect Transistor
2SJ600
Features
Low on-resistance
RDS(on)1 = 50 m MAX. (VGS =-10 V, ID = -13 A)
RDS(on)2 = 79m MAX. (VGS = -4.0 V, ID =-13 A)
Low Ciss: Ciss = 1900 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s, duty cycle 1 %
Symbol
VDSS
VGSS
ID
ID
PD
PD
Tch
Tstg
Rating
-60
20
25
70
45
1.0
150
-55 to +150
Unit
V
V
A
A
W
W
www.kexin.com.cn 1
Free Datasheet http://www.datasheet4u.co

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SMD Type
MOSFICET
2SJ600
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Testconditons
Min
IDSS VDS=-60V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=-10V,ID=-1mA
1.5
Yfs VDS=-10V,ID=-13A
10
VGS=-10V,ID=-13A
RDS(on)
VGS=-4.0V,ID=-13A
Ciss
Coss VDS=-10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
VGS(on)=-10V,ID=--13A ,VDD=-30V,RG=0
tf
QG ID = -25A
QGS VDD= -48 V
QGD VGS =-10 V
VF(S-D) IF = -25A, VGS = 0 V
trr IF = -25 A, VGS = 0 V
Qrr di/dt = 100 A / s
Typ Max
-10
10
2.0 2.5
20
41 50
55 79
1900
350
140
9
10
67
19
38
7
10
1.0
49
100
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
2 www.kexin.com.cn
Free Datasheet http://www.datasheet4u.com/