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SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TRANSZORB®
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power 1500W
DO-214AB
(SMC J-Bend)
0.126 (3.20)
0.114 (2.90)
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
Cathode Band
0.280 (7.11)
0.260 (6.60)
ExtendRedange0.245 (6.22)
Voltage0.220 (5.59)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.012 (0.305)
0.006 (0.152)
0.121 MIN.
(3.07 MIN.)
0.320 (8.13)
0.305 (7.75)
0.008
(0.203)
Max.
Dimensions in inches
and (millimeters)
0.060 MIN.
(1.52 MIN.)
0.320 REF
Features
Mechanical Data
Underwriters Laboratory Recognition under UL standard
for safety 497B: Isolated Loop Circuit Protection
Low profile package with built-in strain relief for
surface mounted applications
Glass passivated junction
Low incremental surge resistance, excellent clamping
capability
1500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
Very fast response time
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Case: JEDEC DO-214AB molded plastic over
passivated junction
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity: For unidirectional types the band denotes the
cathode, which is positive with respect to the anode
under normal TVS operation
Weight: 0.007 oz., 0.21 g
Flammability: Epoxy is rated UL 94V-0
Packaging Codes – Options (Antistatic):
51 1K per Bulk box, 10K/carton
57 850 per 7" plastic Reel (16mm tape), 8.5K/carton
9A 3.5K per 13" plastic Reel (16mm tape), 35K/carton
Devices for Bidirectional Applications
For bi-directional devices, use suffix C or CA (e.g. SMCJ10C, SMCJ10CA). Electrical characteristics apply in both directions.
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with
a 10/1000µs waveform(1)(2)
Peak pulse current with a 10/1000µs waveform(1)
Peak forward surge current 8.3ms single half sine-wave (2)
uni-directional only
Typical thermal resistance, junction to ambient (3)
Typical thermal resistance, junction to lead
Operating junction and storage temperature range
PPPM
IPPM
IFSM
RθJA
RθJL
TJ, TSTG
Minimum 1500
See Next Table
200
75
15
55 to +150
W
A
A
°C/W
°C/W
°C
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2
(2) Mounted on 0.31 x 0.31(8.0 x 8.0mm) copper pads to each terminal
(3) Mounted on minimum recommended pad layout
Document Number 88394
26-Sep-02
www.vishay.com
1
Free Datasheet http://www.datasheet4u.com/

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SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 100A (uni-directional only)
Device Type
Modified
“J” Bend Lead
+SMCJ5.0
+SMCJ5.0A(5)
+SMCJ6.0
+SMCJ6.0A
+SMCJ6.5
+SMCJ6.5A
+SMCJ7.0
+SMCJ7.0A
+SMCJ7.5
+SMCJ7.5A
+SMCJ8.0
+SMCJ8.0A
+SMCJ8.5
+SMCJ8.5A
+SMCJ9.0
+SMCJ9.0A
+SMCJ10
+SMCJ10A
+SMCJ11
+SMCJ11A
+SMCJ12
+SMCJ12A
+SMCJ13
+SMCJ13A
+SMCJ14
+SMCJ14A
+SMCJ15
+SMCJ15A
+SMCJ16
+SMCJ16A
+SMCJ17
+SMCJ17A
+SMCJ18
+SMCJ18A
+SMCJ20
+SMCJ20A
+SMCJ22
+SMCJ22A
+SMCJ24
+SMCJ24A
+SMCJ26
+SMCJ26A
+SMCJ28
+SMCJ28A
+SMCJ30
+SMCJ30A
Device
Marking
Code
UNI BI
GDD GDD
GDE GDE
GDF GDF
GDG GDG
GDH
GDK
GDL
BDH
BDK
GDL
GDM GDM
GDN BDN
GDP BDP
GDQ BDG
GDR BDR
GDS
GDT
GDU
BDS
BDT
BDU
GDV BDV
GDW BDW
GDX BDX
GDY GDY
GDZ GDZ
GED
GEE
GEF
BED
BEE
GEF
GEG GEG
GEH BEH
GEK BEK
GEL BEL
GEM BEM
GEN
GEP
GEQ
GEN
GEP
GEQ
GER GER
GES BES
GET BET
GEU BEU
GEV BEV
GEW
GEX
GEY
BEW
BEX
BEY
GEZ BEZ
GFD BFD
GFE BFE
GFF BFF
GFG BFG
GFH BFH
GFK BFK
Breakdown Voltage
V(BR) at IT(1)
(V)
Min Max
6.40 7.82
6.40 7.07
6.67 8.15
6.67 7.37
7.22 8.82
7.22 7.98
7.78 9.51
7.78 8.60
8.33 10.2
8.33 9.21
8.89 10.9
8.89 9.83
9.44 11.5
9.44 10.4
10.0 12.2
10.0 11.1
11.1 13.6
11.1 12.3
12.2 14.9
12.2 13.5
13.3 16.3
13.3 14.7
14.4 17.6
14.4 15.9
15.6 19.1
15.6 17.2
16.7 20.4
16.7 18.5
17.8 21.8
17.8 19.7
18.9 23.1
18.9 20.9
20.0 24.4
20.0 22.1
22.2 27.1
22.2 24.5
24.4 29.8
24.4 26.9
26.7 32.6
26.7 29.5
28.9 35.3
28.9 31.9
31.1 38.0
31.1 34.4
33.3 40.7
33.3 36.8
Test
Current
IT (mA)
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM (V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge Clamping
at VWM
ID (µA) (3)
Current IPPM Voltage at IPPM
(A)(2)
VC (V)
1000
156.3
9.6
1000
163.0
9.2
1000
131.6
11.4
1000
145.6
10.3
500
122.0
12.3
500
133.9
11.2
200
112.8
13.3
200
125.0
12.0
100
104.9
14.3
100
116.3
12.9
50
100.0
15.0
50
110.3
13.6
20 94.3 15.9
20
104.2
14.4
10 88.8 16.9
10 97.4 15.4
5.0 79.8 18.8
5.0 88.2 17.0
5.0 74.6 20.1
5.0 82.4 18.2
5.0 68.2 22.0
5.0 75.4 19.9
1.0 63.0 23.8
1.0 69.8 21.5
1.0 58.1 25.8
1.0 64.7 23.2
1.0 55.8 26.9
1.0 61.5 24.4
1.0 52.1 28.8
1.0 57.7 26.0
1.0 49.2 30.5
1.0 54.3 27.6
1.0 46.6 32.2
1.0 51.4 29.2
1.0 41.9 35.8
1.0 46.3 32.4
1.0 38.1 39.4
1.0 42.3 35.5
1.0 34.9 43.0
1.0 38.6 38.9
1.0 32.2 46.6
1.0 35.6 42.1
1.0 30.0 50.0
1.0 33.0 45.4
1.0 28.0 53.5
1.0 31.0 48.4
Notes: (1) Pulse test: tp 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMCG/SMCJ5.0CA, the maximum V(BR) is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
www.vishay.com
2
Document Number 88394
26-Sep-02
Free Datasheet http://www.datasheet4u.com/

No Preview Available !

SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 100A (uni-directional only)
Device Type
Modified
“J” Bend Lead
+SMCJ33
+SMCJ33A
+SMCJ36
+SMCJ36A
+SMCJ40
+SMCJ40A
+SMCJ43
+SMCJ43A
+SMCJ45
+SMCJ45A
+SMCJ48
+SMCJ48A
+SMCJ51
+SMCJ51A
+SMCJ54
+SMCJ54A
+SMCJ58
+SMCJ58A
+SMCJ60
+SMCJ60A
+SMCJ64
+SMCJ64A
+SMCJ70
+SMCJ70A
+SMCJ75
+SMCJ75A
+SMCJ78
+SMCJ78A
+SMCJ85
+SMCJ85A
+SMCJ90
+SMCJ90A
+SMCJ100
+SMCJ100A
+SMCJ110
+SMCJ110A
+SMCJ120
+SMCJ120A
+SMCJ130
+SMCJ130A
+SMCJ150
+SMCJ150A
+SMCJ160
+SMCJ160A
+SMCJ170
+SMCJ170A
SMCJ188
SMCJ188A
Device
Marking
Code
UNI BI
GFL BFL
GFM BFM
GFN BFN
GFP BFP
GFQ
GFR
GFS
BFQ
BFR
BFS
GFT BFT
GFU GFU
GFV GFV
GFW GFW
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
GHT
GHS
GFX
GFY
GFZ
GGD
GGE
GGF
GGG
GGH
GGK
GGL
GGM
GGN
GGP
GGQ
GGR
GGS
GGT
GGU
GGV
GGW
GGX
GGY
GGZ
GHD
GHE
GHF
GHG
GHH
GHK
GHL
GHM
GHN
GHP
GHQ
GHR
GHT
GHS
Breakdown Voltage
V(BR) at IT(1)
(V)
Min Max
36.7 44.9
36.7 40.6
40.0 48.9
40.0 44.2
44.4 54.3
44.4 49.1
47.8 58.4
47.8 52.8
50.0 61.1
50.0 55.3
53.3 65.1
53.3 58.9
56.7 69.3
56.7 62.7
60.0 73.3
60.0 66.3
64.4 78.7
64.4 71.2
66.7 81.5
66.7 73.7
71.1 86.9
71.1 78.6
77.8 95.1
77.8 86.0
83.3 102
83.3 92.1
86.7 106
86.7 95.8
94.4 115
94.4 104
100 122
100 111
111 136
111 123
122 149
122 135
133 163
133 147
144 176
144 159
167 204
167 185
178 218
178 197
189 231
189 209
209 255
209 231
Test
Current
IT (mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
VWM (V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge Clamping
at VWM
ID (µA) (3)
Current IPPM Voltage at IPPM
(A)(2)
VC (V)
1.0 25.4 59.0
1.0 28.1 53.3
1.0 23.3 64.3
1.0 25.8 58.1
1.0 21.0 71.4
1.0 23.3 64.5
1.0 19.6 76.7
1.0 21.6 69.4
1.0 18.7 80.3
1.0 20.6 72.7
1.0 17.5 85.5
1.0 19.4 77.4
1.0 16.5 91.1
1.0 18.2 82.4
1.0 15.6 96.3
1.0 17.2 87.1
1.0 14.6 103
1.0 16.0 93
1.0 14.0 107
1.0 15.5 96
1.0 13.2 114
1.0 14.6 103
1.0 12.0 125
1.0 13.3 113
1.0 11.2 134
1.0 12.4 121
1.0 10.8 139
1.0 11.9 126
1.0 9.9 151
1.0 10.9 137
1.0 9.4 160
1.0 10.3 146
1.0 8.4 179
1.0 9.3 162
1.0 7.7 196
1.0 8.5 177
1.0 7.0 214
1.0 7.8 193
1.0 6.5 231
1.0 7.2 209
1.0 5.6 268
1.0 6.2 243
1.0 5.2 287
1.0 5.8 259
1.0 4.9 304
1.0 5.5 275
1.0 4.4 344
1.0 4.6 328
Notes: (1) Pulse test: tp 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
Document Number 88394
26-Sep-02
www.vishay.com
3
Free Datasheet http://www.datasheet4u.com/

No Preview Available !

SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 Peak Pulse Power Rating Curve
100
Fig. 2 Pulse Derating Curve
100
10
1
0.31 x 0.31" (8.0 x 8.0mm)
Copper Pad Areas
0.1
0.1µs
1.0µs
10µs
100µs 1.0ms
td Pulse Width (sec.)
10ms
Fig. 3 Pulse Waveform
150
tr = 10µsec.
TJ = 25°C
Pulse Width (td)
is defined as the point
Peak Value
where the peak current
IPPM
100
decays to 50% of IPPM
Half Value IPP
IPPM
2
50
10/1000µsec. Waveform
as defined by R.E.A.
td
0
0 1.0 2.0 3.0 4.0
t Time (ms)
Fig. 5 Typical Transient Thermal
Impedance
100
10
75
50
25
0
0 25 50 75 100 125 150 175 200
TA Ambient Temperature (°C)
20,000
10,000
Fig. 4 Typical Junction Capacitance
Uni-Directional
Measured at
Zero Bias
1,000
100
10
1
VR, Measured at
Stand-Off
Voltage, VWM
Uni-Directional
Bi-Directional
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
10 100
VWM Reverse Stand-Off Voltage (V)
400
Fig. 6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
200
100
1.0
0.1
0.001
0.01
0.1
1
10 100
tp Pulse Duration (sec)
1000
www.vishay.com
4
10
1
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = TJ max.
10
Number of Cycles at 60Hz
100
Document Number 88394
26-Sep-02
Free Datasheet http://www.datasheet4u.com/