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Power Transistors
2SD1273, 2SD1273A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Complementary to 2SB1299
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1273
base voltage 2SD1273A
VCBO
80
100
Collector to 2SD1273
emitter voltage 2SD1273A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
IB
PC
6
6
3
1
40
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
current
2SD1273
ICBO
2SD1273A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1273
voltage
2SD1273A
ICEO
IEBO
VCEO
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
hFE*
VCE(sat)
fT
VCB = 80V, IE = 0
VCB = 100V, IE = 0
VCE = 40V, IB = 0
VCB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
min typ
60
80
500
50
*hFE Rank classification
Rank
Q
P
O
hFE 500 to 1000 800 to 1500 1200 to 2500
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
max
100
100
100
100
2500
1
Unit
µA
µA
µA
V
V
MHz
1
Free Datasheet http://www.datasheet4u.com/

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Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.0
IB=1.2mA
TC=25˚C
1.0mA
0.8
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
0.2mA
0.2
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1273, 2SD1273A
IC — VBE
5
4
TC=100˚C
3
25˚C
2
–25˚C
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=40
30
10
3 TC=100˚C
1 25˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
10000
3000 TC=100˚C
1000
300
25˚C
–25˚C
100
VCE=4V
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=12V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10
ICP
3
IC
1
0.3
t=1ms
10ms
DC
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2
Free Datasheet http://www.datasheet4u.com/