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2MBI200SB-120
IGBT MODULE (S series)
1200V / 200A / 2 in one package
IGBT Modules
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Isolation voltage (*1)
Screw torque
Symbols
VCES
VGES
Ic
Conditions
Continuous
Ic pulse
-Ic
-Ic pulse
Pc
Tj
Tstg
Viso
Mounting (*2)
Terminals (*2)
1ms
1ms
1 device
AC : 1min.
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
Note *1: All terminals should be connected together when isolation test will be done.
Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Symbols
ICES
IGES
VGE (th)
VCE (sat)
Cies
Coes
Cres
ton
tr
tr (i)
toff
tf
VF
trr
Conditions
VGE = 0V, VCE = 1200V
VCE = 0V, VGE = ±20V
VCE = 20V, IC = 200mA
VGE = 15V
IC = 200A
VGE = 0V
VCE = 10V
f = 1MHz
VCC = 600V
IC = 200A
VGE = ±15V
RG = 4.7Ω
IF = 200A
IF = 200A
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Thermal resistance characteristics
Items
Symbols Conditions
Thermal resistance (1device)
Rth(j-c)
IGBT
FWD
Contact thermal resistance
Rth(c-f) with Thermal Compound (*3)
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
Maximum ratings
1200
±20
300
200
600
400
200
400
1500
150
-40 to +125
2500
3.5
4.5
Units
V
V
A
W
°C
°C
V
N·m
Characteristics
min. typ. max.
- - 1.0
- - 0.4
5.5 7.2 8.5
- 2.3 2.6
- 2.8 -
- 24000 -
- 5000 -
- 4400 -
- 0.35 1.2
- 0.25 0.6
- 0.1 -
- 0.45 1.0
- 0.08 0.3
- 2.3 3.0
- 2.0 -
- - 0.35
Units
mA
µA
V
V
pF
µs
V
µs
Characteristics
min. typ. max.
- - 0.085
- - 0.18
- 0.025 -
Units
°C/W
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2MBI200SB-120
Characteristics (Representative)
Collector current vs. Collector-Emiiter voltage
Tj= 25°C (typ.)
500
VGE= 20V 15V 12V
400
300
10V
200
100
8V
0
012345
Collector - Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emiiter voltage
VGE=15V (typ.)
500
400
Tj= 25°C
Tj= 125°C
300
200
100
0
012345
Collector - Emitter voltage : VCE [ V ]
100000
Capacitance vs. Collector-Emiiter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
10000
5000
Cies
1000
500
0
Coes
Cres
5 10 15 20 25 30
Collector - Emitter voltage : VCE [ V ]
35
IGBT Modules
Collector current vs. Collector-Emiiter voltage
Tj= 125°C (typ.)
500
VGE= 20V 15V 12V
400
300 10V
200
100
0
0
8V
1234
Collector - Emitter voltage : VCE [ V ]
5
Collector-Emiiter voltage vs. Gate-Emitter voltage
Tj= 25°C (typ.)
10
8
6
4
2
0
5
1000
Ic= 400A
Ic= 200A
I c=100A
10 15 20
Gate - Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
25
25
800 20
600 15
400 10
200 5
0
0
2
500
1000
1500
Gate charge : Qg [ nC ]
0
2000
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2MBI200SB-120
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 25°C
1000
500 toff
ton
tr
100
tf
50
0
5000
100 200
Collector current : Ic [ A ]
300
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C
ton
toff
tr
1000
500
100 t f
50
1
160
10
Gate resistance : Rg [ Ω ]
100
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C
Eon
120
80
40 Eoff
Er r
0
1 10 100
Gate resistance : Rg [ Ω ]
3
Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 125°C
1000
toff
500
t on
tr
tf
100
50
0 100 200 300
Collector current : Ic [ A ]
Switching loss vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω
60
Eon(125°C)
40
Eon(25°C)
Eoff(125°C)
20
Eoff(25°C)
Err(125°C)
0
0
450
Err(125°C)
100 200 300
Collector current : Ic [ A ]
400
Reverse bias safe operating area
+VGE=15V, -VGE 15V, Rg 4.7Ω, Tj 125°C
400
350
300
250
200
150
100
50
0
0 200 400 600 800 1000 1200 1400
Collector - Emitter voltage : VCE [ V ]
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2MBI200SB-120
Forward current vs. Forward on voltage (typ.)
500
Tj=125°C Tj=25°C
400
300
200
100
0
01234
Forward on voltage : VF [ V ]
Transient thermal resistance
1
0.1
0.05
FWD
IGBT
0.01
1E-3
0 .001
0.01 0.1
Pulse width : Pw [ sec ]
1
IGBT Modules
Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V, Rg=4.7Ω
500
Irr(125°C)
trr(125°C)
100 Irr(25°C)
trr(25°C)
10
0
100 200
Forward current : IF [ A ]
300
4
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2MBI200SB-11. 2Ou0tline Drawing ( Unit : mm )
2MBI200SB-120
Outline Drawings, mm
IGBT Modules
Equivalent Circ2.uEiqtuSivaclehnet cmircautitic
MS5F 4921
3
8
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5
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