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2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
Switching Regulator Applications
Unit: mm
Low drainsource ON resistance : RDS (ON) = 0. 33 Ω (typ.)
High forward transfer admittance : |Yfs| = 8.5 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
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: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
15
60
150
765
15
15
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
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Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
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Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7.0 A
VDS = 10 V, ID = 7.0 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn-on time
Fall time
ton
tf
Turn-off time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK4107
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 0.33 0.4
4.0 8.5
— 2450 —
— 15 —
— 220 —
μA
V
μA
V
V
Ω
S
pF
— 50 —
— 90 —
ns
— 45 —
— 175 —
— 48 —
— 26 —
— 22 —
nC
Min Typ. Max Unit
— — 15 A
— — 60 A
— — 1.7 V
— 1050 —
ns
— 13 — μC
TOSHIBA
K4107
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
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10
Common source
Tc = 25°C
Pulse test
8
ID – VDS
10
8
6
6
4
2
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0
0
5.25
5
4.75
4.5
VGS = 4 V
123 4
Drainsource voltage VDS (V)
5
2SK4107
ID – VDS
20
10
Common source
Tc = 25°C
Pulse test
16
12 6
5.75
8
5.5
5.25
45
4.75
0 4.5 VGS = 4 V
0 10 20 30 40 50
Drainsource voltage VDS (V)
50
Common source
VDS = 20 V
Pulse test
40
ID – VGS
30
20
Tc = −55°C
25
100
10
0
0 2 4 6 8 10
Gatesource voltage VGS (V)
VDS – VGS
10
Common source
Tc = 25°C
Pulse test
8
6
15
4
8
2
ID = 4 A
0
0 4 8 12 16 20
Gatesource voltage VGS (V)
100
Common source
VDS = 20 V
Pulse test
Yfs⎪ − ID
Tc = −55°C
25
10
100
RDS (ON) ID
1
Common source
Tc = 25°C
Pulse test
VGS = 10 V
15
1
1 10 100
Drain current ID (A)
0.1
0.1
1 10
Drain current ID (A)
100
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RDS (ON) – Tc
1.0
Common source
VGS = 10 V
Pulse test
0.8
0.6
0.4
0.2
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0
80
ID = 15 A
8
4
40 0 40 80 120
Case temperature Tc (°C)
160
2SK4107
IDR VDS
100
Common source
Tc = 25°C
Pulse test
10
1 10
5
3
1
VGS = 0, 1 V
0.1
0
0.2 0.4
0.6 0.8
1.0 1.2
Drainsource voltage VDS (V)
10000
Capacitance – VDS
Ciss
1000
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
1
Crss
10 100
Drainsource voltage VDS (V)
Vth Tc
5
4
3
2
1 Common source
VDS = 10 V
ID = 1 mA
0 Pulse test
80 40 0 40 80 120
Case temperature Tc (°C)
160
PD Tc
200
150
100
50
0
0 40 80 120 160 200
Case temperature Tc (°C)
Dynamic input/output characteristics
500
400
400
VDS
Common source
ID = 15 A
Tc = 25°C
Pulse test
20
16
300
VDS = 100 V
400
12
200
200
200
8
VGS
100
VDS = 100 V
4
00
0 20 40 60 80 100
Total gate charge Qg (nC)
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2SK4107
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SAFE OPERATING AREA
1000
100 ID max (continuous)
ID max (pulse) *
10 DC OPERATION
Tc = 25°C
1 ms *
1
100 μs *
* Single pulse Ta = 25
0.1 Curves must be derated
linearly with increase in
temperature.
0.01
1
10
VDSS max
100
Drain-source voltage VDS (V)
1000
EAS – Tch
1000
800
600
400
200
0
25 50 75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 5.78 mH
Waveform
ΕAS
=
1
2
L
I2
⎜⎜⎝⎛
BVDSS
BVDSS VDD
⎟⎟⎠⎞
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