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Power Transistors
2SD1264, 2SD1264A
Silicon NPN triple diffusion planar type
For low-freauency power amplification
For TV vertical deflection output
Complementary to 2SB940 and 2SB940A
s Features
q High collector to emitter VCEO
q Large collector power dissipation PC
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to 2SD1264
emitter voltage 2SD1264A
VCBO
VCEO
200
150
180
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
PC
6
3
2
30
2
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter 2SD1264
voltage
2SD1264A
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
ICBO
IEBO
VCBO
VCEO
VEBO
hFE1*
hFE2
VBE
VCE(sat)
fT
VCB = 200V, IE = 0
VEB = 4V, IC = 0
IC = 50µA, IE = 0
IC = 5mA, IB = 0
IE = 500µA, IC = 0
VCE = 10V, IC = 150mA
VCE = 10V, IC = 400mA
VCE = 10V, IC = 400mA
IC = 500mA, IB = 50mA
VCE = 5V, IC = 0.5A, f = 1MHz
*hFE1 Rank classification
Rank
Q
P
hFE1 60 to 140 100 to 240
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
φ3.1±0.1
1.3±0.2
1.4±0.1
0.8±0.1
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
123
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min typ max Unit
50 µA
50 µA
200 V
150
V
180
6V
60 240
50
1V
1V
20 MHz
1
Free Datasheet http://www.datasheet4u.net/

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Power Transistors
50
40
(1)
30
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
20
(2)
10
(3)
(4)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.2
TC=25˚C
1.0 IB=7mA
6mA
0.8 5mA
4mA
0.6
3mA
0.4
2mA
0.2 1mA
0
0 4 8 12 16 20 24
Collector to emitter voltage VCE (V)
2SD1264, 2SD1264A
IC — VBE
1.2
1.0 25˚C
TC=100˚C –25˚C
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
10
IC/IB=10
3
1 TC=100˚C
0.3 25˚C
–25˚C
0.1
0.03
0.01
0.01 0.03 0.1 0.3
1
Collector current IC (A)
10000
3000
1000
hFE — IC
VCE=10V
300 TC=100˚C
25˚C
100
–25˚C
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
1000
300
100
fT — IC
VCE=5V
f=1MHz
TC=25˚C
30
10
3
1
0.3
0.1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
10
ICP
3
IC
1
0.3
0.1
Non repetitive pulse
TC=25˚C
5ms
1ms
t=0.5ms
DC
0.03
0.01
0.003
0.001
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102 (1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2
Free Datasheet http://www.datasheet4u.net/