80N03L.pdf 데이터시트 (총 10 페이지) - 파일 다운로드 80N03L 데이타시트 다운로드

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SPP80N03L
SIPMOS® Power Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Logic Level
dv/dt rated
175°C operating temperature
VDS
RDS(on)
ID
30
0.006
80
V
A
Type
SPP80N03L
SPB80N03L
Package Ordering Code Packaging
P-TO220-3-1 Q67040-S4735-A2 Tube
P-TO263-3-2 Q67040-S4735-A3 Tape and Reel
Pin 1 Pin 2 Pin 3
GDS
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C, 1)
TC = 100 °C
ID
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 80 A, VDD = 25 V, RGS = 25
IDpulse
EAS
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
dv/dt
IS = 80 A, VDS = 24 V, di/dt = 200 A/µs,
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Semiconductor Group
1
Value
80
80
320
700
30
6
±20
300
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
Free Datasheet http://www.datasheet4u.net/

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Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area2)
SPP80N03L
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 0.5 K/W
- - 62
- - 62
- - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
Gate threshold voltage, VGS = VDS
ID = 240 µA
Zero gate voltage drain current
VDS = 30 V, VGS = 0 V, Tj = 25 °C
VDS = 30 V, VGS = 0 V, Tj = 150 °C
V(BR)DSS 30
-
-V
VGS(th) 1.2 1.6
2
I DSS
µA
0.1 1
- - 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, ID = 80 A
VGS = 10 V, ID = 80 A
I GSS
RDS(on)
- 10 100 nA
- 0.0053 0.008
- 0.0033 0.006
1current limited by bond wire
2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Semiconductor Group
2
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SPP80N03L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
VDS2*ID*RDS(on)max , ID = 80 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 15 V, VGS = 4.5 V, ID = 80 A,
RG = 1.25
gfs
Ciss
Coss
Crss
t d(on)
30 125 - S
- 4640 5900 pF
- 1915 2500
- 785 1000
- 30 45 ns
Rise time
VDD = 15 V, VGS = 4.5 V, ID = 80 A,
RG = 1.25
tr - 50 75
Turn-off delay time
VDD = 15 V, VGS = 4.5 V, ID = 80 A,
RG = 1.25
t d(off)
- 40 60
Fall time
VDD = 15 V, VGS = 4.5 V, ID = 80 A,
RG = 1.25
tf - 50 75
Semiconductor Group
3
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SPP80N03L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = 24 V, ID = 80 A
Gate to drain charge
VDD = 24 V, ID = 80 A
Gate charge total
VDD = 24 V, ID = 80 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 24 V, ID = 80 A
Qgs -
Qgd -
Qg -
V(plateau)
-
11 17 nC
62 93
145 220
3.68 - V
Reverse Diode
Inverse diode continuous forward current
TC = 25 °C
IS
- - 80 A
Inverse diode direct current,pulsed
TC = 25 °C
ISM - - 320
Inverse diode forward voltage
VGS = 0 V, IF = 160 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/µs
VSD - 1.1 1.7 V
trr - 70 105 ns
Reverse recovery charge
VR = 15 V, IF=lS , diF/dt = 100 A/µs
Qrr - 0.082 0.12 µC
Semiconductor Group
4
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Power Dissipation
Ptot = f (TC)
SPP80N03L
320
W
240
200
160
120
80
40
0
0 20 40 60 80 100 120 140 160 °C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 °C
10 3 SPP80N03L
A tp = 54.0µs
100 µs
Drain current
ID = f (TC)
parameter: VGS 10 V
SPP80N03L
90
A
SPP80N03L
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 °C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP80N03L
K/W
10 0
10 -1
10 2
10
1
10
-1
10 0
Semiconductor Group
1 ms
10 ms
10 1 DC V
10 2
VDS
5
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
Free Datasheet http://www.datasheet4u.net/