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STW12NC60
N-CHANNEL 600V - 0.48- 12A TO-247
PowerMeshII MOSFET
TYPE
VDSS
RDS(on)
ID
STW12NC60
600V
< 0.55
12 A
s TYPICAL RDS(on) = 0.48
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
()Pulse width limited by safe operating area
Value
Unit
600 V
600 V
±30 V
12 A
8A
18 A
190 W
1.52 W/°C
3 V/ns
–65 to 150
°C
150
(1)ISD 11A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
°C
June 2000
1/8
Free Datasheet http://www.datasheet4u.net/

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STW12NC60
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthc-sink Thermal Resistance Case-sink Typ
Tl Maximum Lead Temperature For Soldering Purpose
0.66
30
0.1
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
12
850
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
600
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
50
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
ID(on)
On State Drain Current
Test Conditions
VDS = VGS, ID = 250 µA
VGS = 10V, ID = 6A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
2
Typ.
3
0.48
Max.
4
0.55
Unit
V
12 A
DYNAMIC
Symbol
Parameter
gfs Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID =6A
Min.
VDS = 25V, f = 1 MHz, VGS = 0
Typ.
13
2150
275
39
Max.
Unit
S
pF
pF
pF
2/8
Free Datasheet http://www.datasheet4u.net/

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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
td(on)
tr
Turn-on Delay Time
Rise Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300V, ID = 6 A
RG = 4.7, VGS = 10V
(see test circuit, Figure 3)
VDD = 480V, ID = 12 A,
VGS = 10V, RG = 4.7
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf Fall Time
tc Cross-over Time
Test Conditions
VDD = 480V, ID = 12 A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 12 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 12 A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STW12NC60
Min.
Typ.
20
15
65
13
28
Max.
90
Unit
ns
ns
nC
nC
nC
Min.
Typ.
14
25
30
Max.
Unit
ns
ns
ns
Min.
Typ.
590
5.6
19
Max.
12
48
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8
Free Datasheet http://www.datasheet4u.net/