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Bulletin I2404 rev. B 05/06
MEDIUM POWER THYRISTORS
16RIA SERIES
Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V VDRM/ VRRM
RoHS Compliant
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
IT(AV)
IT(RMS)
ITSM
@ TC
@50Hz
@ 60Hz
16RIA
10 to 120
140 to 160
16 16
85 85
35 35
340 225
360 235
I2t
@50Hz
574
255
@ 60Hz
524
235
VDRM/VRRM
tq typical
TJ
100 to 1200
1400 to 1600
110
- 65 to 125
Units
A
°C
A
A
A
A2s
A2s
V
μs
°C
16A
Case Style
TO-208AA (TO-48)
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16RIA Series
Bulletin I2404 rev. B 05/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
10
VDRM/VRRM, max. repetitive
peak and off-state voltage (1)
V
100
VRSM , maximum non-
repetitive peak voltage (2)
V
150
IDRM/IRRM max.
@ TJ =mTAJ max.
20
16RIA
20
40
60
80
100
120
140
160
200
400
600
800
1000
1200
1400
1600
300
500
700
900
1100
1300
1500
1700
10
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
(2) For voltage pulses with tp 5ms
On-state Conduction
Parameter
IT(AV)
IT(RMS)
ITSM
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
I2t Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage
16RIA
10 to 120
16
85
140 to 160
16
85
35 35
340 225
360 235
285 190
300 200
574 255
524 235
405 180
375 165
5740
2550
0.97 1.14
1.24 1.31
17.9 14.83
13.6 12.03
1.75 ---
--- 1.80
Units Conditions
A
°C
A
A
A2s
A2s
V
180° sinusoidal conduction
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms
t = 8.3ms
100% VRRM
reapplied
Sinusoidal half wave,
t = 10ms
t = 8.3ms
No voltage
reapplied
Initial TJ = TJ max.
t = 10ms
t = 8.3ms
100% VRRM
reapplied
t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
V Ipk= 50 A, TJ = 25°C
IH Maximum holding current 130 mA TJ = 25°C. Anode supply 6V, resistive load,
IL Latching current
200
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16RIA Series
Bulletin I2404 rev. B 05/06
Switching
Parameter
16RIA
Units Conditions
di/dt
Max. rate of rise of turned-on
current
VDRM 600V
VDRM 800V
VDRM 1000V
VDRM 1600V
TJ = TJ max., VDM = rated VDRM
200 A/μs Gate pulse = 20V, 15Ω, tp = 6μs, tr = 0.1μs max.
180 ITM = (2x rated di/dt) A
160
150
tgt Typical turn-on time
trr Typical reverse recovery time
tq Typical turn-off time
0.9 TJ = 25°C,
at = rated VDRM/VRRM, TJ = 125°C
4 μs TJ = TJ max.,
ITM = IT(AV), tp > 200μs, di/dt = -10A/μs
110 TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V,
di/dt = -10A/μs, dv/dt = 20V/μs linear to
67% VDRM, gate bias 0V-100W
(*) tq = 10μsup to 600V, tq = 30μs up to 1600V available on special request.
Blocking
Parameter
16RIA
Units Conditions
dv/dt Max. critical rate of rise of
off-state voltage
100
300 (*)
V/μs
TJ = TJ max. linear to 100% rated VDRM
TJ = TJ max. linear to 67% rated VDRM
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. 16RIA160S90.
Triggering
Parameter
PGM Maximum peak gate power
PG(AV) Maximum average gate power
IGM Max. peak positive gate current
-VGM Maximum peak negative
gate voltage
IGT DC gate current required
to trigger
VGT DC gate voltage required
to trigger
IGD DC gate current not to trigger
VGD DC gate voltage not to trigger
16RIA
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
0.2
Units Conditions
W TJ = TJ max.
A TJ = TJ max.
V TJ = TJ max.
TJ = - 65°C
mA TJ = 25°C
TJ = 125°C
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
TJ = - 65°C
V TJ = 25°C
V TJ = 125°C
mA TJ = TJ max., VDRM = rated value
V TJ = TJ max.
Max. gate current/ voltage not to
trigger is the max. value which
VDRM = rated value
will not trigger any unit with rated
VDRM anode-to-cathode applied
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16RIA Series
Bulletin I2404 rev. B 05/06
Thermal and Mechanical Specification
Parameter
16RIA
Units Conditions
TJ Max. operating temperature range
Tstg Max. storage temperature range
RthJC Max. thermal resistance,
junction to case
- 65 to 125
- 65 to 125
0.86
RthCS Max. thermal resistance,
case to heatsink
0.35
T Mounting torque
to nut to device
20(27.5) 25
0.23(0.32) 0.29
°C
°C
K/W
K/W
lbf-in
kgf.m
DC operation
Mounting surface, smooth, flat and greased
Lubricated threads
(Non-lubricated threads)
2.3(3.1)
2.8
Nm
wt Approximate weight
14 (0.49)
g (oz)
Case style
TO-208AA (TO-48)
See Outline Table
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
60°
30°
0.21
0.25
0.31
0.45
0.76
0.15
0.25
0.34
0.47
0.76
K/W
TJ = TJ max.
Ordering Information Table
Device Code
16 RIA 160 M S90
1 23 45
1 - Current code
2 - Essential part number
3 - Voltage code: Code x 10 = VRRM (See Voltage Rating Table)
4 - None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 X 1
5 - Critical dv/dt: None = 300V/μs (Standard value)
S90 = 1000V/μs (Special selection)
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Outline Table
16RIA Series
Bulletin I2404 rev. B 05/06
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
130 16RIA Series (100 to 1200V)
120 RthJC (DC) = 1.15 K/W
110
100
Conduction Angle
90
30°
80 60°
90°
70
120°
180°
60
50
0
5 10 15 20 25
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
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130
16RIA Series (100 to 1200V)
120 RthJC (DC) = 1.15 K/W
110
100
90
80
70
60
50
0
Conduction Period
30°
60°
90°
120°
180°
DC
10 20 30 40
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristic
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