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FQP12N60C / FQPF12N60C
600V N-Channel MOSFET
September 2007
QFET ®
Features
• 12A, 600V, RDS(on) = 0.65@VGS = 10 V
• Low gate charge ( typical 48 nC)
• Low Crss ( typical 21pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
FQP12N60C FQPF12N60C
600
12 12*
7.4 7.4*
48 48*
± 30
870
12
22.5
4.5
225 51
1.78 0.41
-55 to +150
300
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP12N60C FQPF12N60C
0.56 2.43
0.5 --
62.5 62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FQP12N60C / FQPF12N60C Rev. B1
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/

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Package Marking and Ordering Information
Device Marking
FQP12N60C
FQPF12N60C
Device
FQP12N60C
FQPF12N60C
Package
TO-220
TO-220F
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Off Characteristics
BVDSS
BVDSS
/ TJ
IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0V, ID = 250µA, TJ = 25°C
ID = 250µA, Referenced to 25°C
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
gFS Forward Transconductance
VDS = 40V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 300V, ID = 12A
RG = 25
VDS = 400V, ID = 12A
VGS = 10V
(Note 4, 5)
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 12A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0V, IS = 12A
dIF/dt =100A/µs
(Note 4)
600
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25, Starting TJ = 25°C
3. ISD 12A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width 300µs, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Typ
--
0.5
--
--
--
--
--
0.53
13
1760
182
21
30
85
140
90
48
8.5
21
--
--
--
420
4.9
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0 V
0.65
-- S
2290
235
28
pF
pF
pF
70 ns
180 ns
280 ns
190 ns
63 nC
-- nC
-- nC
12 A
48 A
1.4 V
-- ns
-- µC
FQP12N60C / FQPF12N60C Rev. B1
2
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/

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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
101 Bottom: 4.5 V
Notes :
100 1. 250µs Pulse Test
2. TC = 25
100 101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
Notes :
1.
2.
V25DS0µ=s40PVulse
Test
468
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10
1.5
VGS = 10V
1.0
0.5
0
VGS = 20V
Note : TJ = 25
5 10 15 20 25 30 35
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3500
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
Notes ;
1.
2.
fV=GS1=M0HVz
100 101
VDS, Drain-Source Voltage [V]
101
100
10-1
0.2
150
25
Notes :
1.
2.
V25G0Sµ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2
VSD, Source-Drain voltage [V]
1.4
Figure 6. Gate Charge Characteristics
12
VDS = 120V
10 VDS = 300V
8 VDS = 480V
6
4
2
Note : ID = 12A
0
0 10 20 30 40 50
QG, Total Gate Charge [nC]
FQP12N60C / FQPF12N60C Rev. B1
3
www.fairchildsemi.com
Free Datasheet http://www.Datasheet-PDF.com/