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Ordering number : ENN7625
2SJ652
P-Channl Silicon MOSFET
2SJ652
General-Purpose Switching Device Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Package Dimensions
unit : mm
2063A
10.0
3.2
[2SJ652]
4.5
2.8
Specifications
Absolute Maximum Ratings at Ta=25°C
1.6
1.2
0.75
123
2.55 2.55
2.55 2.55
2.4
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220ML
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Tc=25°C
Ratings
--60
±20
--28
--112
2.0
30
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : J652
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
ID=--1mA, VGS=0
VDS=--60V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
min
--60
--1.2
18
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
26 S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72503 TS IM TA-4245 No.7625-1/4
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2SJ652
Continued from preceding page.
Parameter
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--14A, VGS=--10V
ID=--14A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--30V, VGS=--10V, ID=--28A
VDS=--30V, VGS=--10V, ID=--28A
VDS=--30V, VGS=--10V, ID=--28A
IS=--28A, VGS=0
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --30V
ID= --14A
RL=2.1
D VOUT
2SJ652
P.G 50S
Ratings
min typ max
Unit
28.5
38 m
39 55.5 m
4360
pF
470 pF
335 pF
33 ns
210 ns
310 ns
180 ns
80 nC
15 nC
12 nC
--0.96
--1.2 V
--50
Tc=25°C
--40
ID -- VDS
--4V
--30
--20
VGS= --3V
--10
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Drain-to-Source Voltage, VDS -- V IT06535
--50
VDS= --10V
--40
ID -- VGS
--30
--20
--10 25°C
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT06536
No.7625-2/4
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2SJ652
RDS(on) -- VGS
100
ID= --14A
80
60
40 Tc=75°C
25°C
--25°C
20
RDS(on) -- Tc
70
60
50
40
30
I DI=D-=-1-4-A14,AV,GVSG= S--=4V--10V
20
10
0
--2 --3 --4 --5 --6 --7 --8
Gate-to-Source Voltage, VGS -- V
yfs-- ID
100
VDS= --10V
7
--9 --10
IT06537
5
3
Tc= --25°C
2 75°C
25°C
10
7
5
3
2
1.0
--0.1
7
5
3
2
100
7
5
3
2
10
--0.1
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
2 3 5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
SW Time -- ID
2 3 57
IT06539
td(off)
tf
tr
td(on)
23
VDD= --30V
VGS= --10V
5 7 --1.0 2 3 5 7 --10
Drain Current, ID -- A
VGS -- Qg
23 5
IT06541
10 20 30 40 50 60 70 80
Total Gate Charge, Qg -- nC
IT06559
0
--50
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
0
7
5
--25 0
25 50 75 100 125 150
Case Temperature, Tc -- °C
IT06538
IF -- VSD
VGS=0
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V IT06540
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
3
2
1000
7
5
3
2
Coss
Crss
100
0
--5 --10 --15 --20 --25 --30
Drain-to-Source Voltage, VDS -- V IT06542
ASO
3
2
IDP= --112A
<10µs
--100
7
5
3
ID= --28A
2
--10
7
5
3
2
100µ1s0µs
DC op1e0r0amtio1sn0m1sms
Operation in this area
--1.0
7
is limited by RDS(on).
5
3
2 Tc=25°C
--0.1 Single pulse
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Drain-to-Source Voltage, VDS -- V
5 7 --100
IT06543
No.7625-3/4
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