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® STPS8H100D/F/G/R/FP
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
8A
100 V
175 °C
0.58 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s HIGH JUNCTION TEMPERATURE CAPABILITY
s LOW LEAKAGE CURRENT
s GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE
DROP
s INSULATED PACKAGE:
ISOWATT220AC, TO-220FPAC
Insulating voltage = 2000V DC
Capacitance = 12pF
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Schottky barrier rectifier designed for high fre-
quency compact Switched Mode Power Sup-
plies such as adaptators and on board DC/DC
converters.
ABSOLUTE RATINGS (limiting values)
A
K
TO-220AC
STPS8H100D
K
A
K
ISOWATT220AC
STPS8H100F
A
NC
D2PAK
STPS8H100G
A
K
NC
I2PAK
STPS8H100R
A
K
TO-220FPAC
STPS8H100FP
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current
δ = 0.5
TO-220AC /
I2PAK / D2PAK
ISOWATT220AC
TO-220FPAC
Tc= 165°C
Tc = 150°C
100
30
8
IFSM Surge non repetitive forward
current
tp = 10 ms sinusoidal
250
IRRM
IRSM
PARM
Tstg
Tj
Repetitive peak reverse current
tp = 2 µs F = 1kHz square
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature
1
3
10800
- 65 to + 175
175
dV/dt Critical rate of rise of rise voltage
10000
July 2003 - Ed: 6D
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1/8
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STPS8H100D/F/G/R/FP
THERMAL RESISTANCES
Symbol
Rth (j-c)
Rth (j-c)
Junction to case
Junction to case
Parameter
TO-220AC / I2PAK / D2PAK
ISOWATT220AC / TO-220FPAC
Value
1.6
4
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Tests Conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
VF ** Forward voltage drop
Tj = 25°C
IF = 8 A
Tj = 25°C
IF = 10 A
Tj = 25°C
IF = 16 A
Tj = 125°C IF = 8 A
Tj = 125°C IF = 10 A
Tj = 125°C IF = 16 A
Min.
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.48 x IF(AV) + 0.0125 x IF2(RMS)
Typ.
2
0.56
0.59
0.65
Max.
4.5
6
0.71
0.77
0.81
0.58
0.64
0.68
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current.
(TO-220AC / ISOWATT220AC / I2PAK / D2PAK)
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
012
δ = 0.05
3
δ = 0.1 δ = 0.2
IF(av) (A)
456
δ = 0.5
δ=1
T
δ=tp/T
tp
7 8 9 10
Fig. 2: Normalized avalanche power derating
versus pulse duration.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
100 1000
2/8
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STPS8H100D/F/G/R/FP
Fig. 3: Normalized avalanche power derating
versus junction temperature.
Fig. 4-1: Average forward current versus ambient
temperature (δ=0.5) (TO-220AC / I2PAK / D2PAK).
PARM(tp)
PARM(25°C)
1.2
1
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
0.8
0.6
0.4
0.2
0
0
Tj(°C)
25 50 75 100 125 150
6
4
T
2
Rth(j-a)=15°C/W
δ=tp/T
tp
Tamb(°C)
0
0 20 40 60 80 100 120 140 160 180
Fig. 4-2: Average forward current versus ambient
temperature
(δ=0.5)
(ISOWATT220AC,
TO-220FPAC).
IF(av)(A)
10
8
Rth(j-a)=Rth(j-c)
6
4
T
2
δ=tp/T
0
0 20
tp
40
Rth(j-a)=50°C/W
Tamb(°C)
60 80 100 120 140 160 180
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values)
(TO-220AC / I2PAK / D2PAK).
IM(A)
160
140
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
Tc=75°C
Tc=100°C
1E-2
t(s)
1E-1
Tc=125°C
1E+0
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values)
(ISOWATT220AC, TO-220FPAC).
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
0
1E-3
t
δ=0.5
Tc=75°C
Tc=100°C
1E-2
t(s)
1E-1
Tc=125°C
1E+0
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration
(TO-220AC / I2PAK / D2PAK).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
3/8
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STPS8H100D/F/G/R/FP
Fig. 6-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AC, TO-220FPAC).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-3
Single pulse
1E-2
tp(s)
1E-1
T
δ=tp/T
1E+0
tp
1E+1
IR(µA)
5E+3
1E+3
Tj=125°C
1E+2
1E+1
1E+0
1E-1
1E-2
0
Tj=25°C
VR(V)
10 20 30 40 50 60 70 80 90 100
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
1000
500
F=1MHz
Tj=25°C
200
100
1
VR(V)
10
100
Fig. 9: Forward voltage drop versus forward
current (maximum values).
IFM(A)
50.0
10.0
Tj=125°C
Tj=25°C
1.0
0.1
0
VFM(V)
0.2 0.4 0.6 0.8 1
1.2 1.4 1.6
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness:
35µm)(D2PAK).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10 S(Cu) (cm²)
0
0 4 8 12 16 20 24 28 32 36 40
4/8
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PACKAGE MECHANICAL DATA
TO-220AC
H2
L5
ØI
L6
L2
L9
F1
L4
F
G
STPS8H100D/F/G/R/FP
REF.
A
CA
C
L7 D
E
F
F1
G
D H2
L2
L4
M
E
L5
L6
L7
L9
M
Diam. I
DIMENSIONS
Millimeters
Inches
Min. Max. Min. Max.
4.40 4.60 0.173 0.181
1.23 1.32 0.048 0.051
2.40 2.72 0.094 0.107
0.49 0.70 0.019 0.027
0.61 0.88 0.024 0.034
1.14 1.70 0.044 0.066
4.95 5.15 0.194 0.202
10.00 10.40 0.393 0.409
16.40 typ.
0.645 typ.
13.00 14.00 0.511 0.551
2.65 2.95 0.104 0.116
15.25 15.75 0.600 0.620
6.20 6.60 0.244 0.259
3.50 3.93 0.137 0.154
2.6 typ.
0.102 typ.
3.75 3.85 0.147 0.151
PACKAGE MECHANICAL DATA
ISOWATT220AC
A DIMENSIONS
H
B
REF. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 4.40
4.60 0.173
0.181
B 2.50
2.70 0.098
0.106
L6
D 2.40
2.75 0.094
0.108
L2
L7 E 0.40
0.70 0.016
0.028
F 0.75
1.00 0.030
0.039
L3
F1 1.15
1.70 0.045
0.067
G 4.95
5.20 0.195
0.205
F1
H 10.00
10.40 0.394
0.409
L2 16.00
0.630
L3 28.60
30.60 1.125
1.205
L6 15.90
16.40 0.626
0.646
F
DE
L7 9.00
9.30 0.354
0.366
G
Diam 3.00
3.20 0.118
0.126
5/8
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