09N05.pdf 데이터시트 (총 8 페이지) - 파일 다운로드 09N05 데이타시트 다운로드

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SPD 09N05
SIPMOS® Power Transistor
Features
N channel
Enhancement mode
Avalanche rated
Product Summary
Drain source voltage
VDS 55 V
Drain-Source on-state resistance RDS(on) 0.1
Continuous drain current
ID 9.2 A
www.DataSheet4Ud.cvom/dt rated
175˚C operating temperature
Type
SPD09N05
SPU09N05
Package
P-TO252
P-TO251
Ordering Code Packaging
Q67040-S4136 Tape and Reel
Q67040-S4130-A2 Tube
Pin 1 Pin 2 Pin 3
GDS
MaximumRatings , at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 ˚C
TC = 100 ˚C
ID
Pulsed drain current
IDpulse
TC = 25 ˚C
Avalanche energy, single pulse
ID = 9.2 A, VDD = 25 V, RGS = 25
EAS
Avalanche energy, periodic limited by Tjmax
EAR
Reverse diode dv/dt
dv/dt
IS = 9.2 A, VDS = 40 V, di/dt = 200 A/µs
Gate source voltage
Power dissipation
TC = 25 ˚C
VGS
Ptot
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Tj , Tstg
Value
9.2
6.5
37
35
2.4
6
±20
24
-55... +175
55/175/56
Unit
A
mJ
kV/µs
V
W
˚C
Data Sheet
1
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SPD 09N05
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leded
www.DataSheet4U.com
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area1)
Symbol
Values
Unit
min. typ. max.
RthJC
RthJA
RthJA
- - 6.25 K/W
- - 100
- - 75
- - 50
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA
V(BR)DSS 55
-
-V
Gate threshold voltage, VGS = VDS
ID = 10 µA
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 ˚C
VDS = 50 V, VGS = 0 V, Tj = 150 ˚C
VGS(th)
2.1
3
4
IDSS
µA
- 0.1 1
- - 100
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 6.5 A
IGSS
RDS(on)
- 10 100 nA
- 0.093 0.1
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Data Sheet
2
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SPD 09N05
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
www.DataSheet4VUD.coSm2*ID*RDS(on)max , ID = 6.5 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50
gfs
Ciss
Coss
Crss
td(on)
3 4.5 - S
- 215 270 pF
- 75 95
- 45 60
- 15 25 ns
tr - 20 30
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 9.2 A,
RG = 50
td(off)
- 30 45
tf - 25 40
Data Sheet
3
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SPD 09N05
Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
www.DataSheet4VUD.coDm= 40 V, ID = 9.2 A
Gate to drain charge
VDD = 40 V, ID = 9.2 A
Gate charge total
VDD = 40 V, ID = 9.2 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 40 V, ID = 9.2 A
Qgs -
Qgd -
Qg -
V(plateau)
-
1.3 2 nC
3.5 5.25
7 11
5.9 - V
Reverse Diode
Inverse diode continuous forward current
TC = 25 ˚C
IS
- - 9.2 A
Inverse diode direct current,pulsed
TC = 25 ˚C
ISM - - 37
Inverse diode forward voltage
VGS = 0 V, IF = 18.5 A
Reverse recovery time
VR = 30 V, IF=IS , diF/dt = 100 A/µs
VSD - 1.05 1.8 V
trr - 50 75 ns
Reverse recovery charge
VR = 30 V, IF=lS , diF/dt = 100 A/µs
Qrr - 0.085 0.13 µC
Data Sheet
4
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SPD 09N05
Power Dissipation
Ptot = f (TC)
SPD09N05
26
W
22
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20
18
16
14
12
10
8
6
4
2
00 20 40 60 80 100 120 140 160 ˚C 190
TC
Safe operating area
ID = f (VDS)
parameter : D = 0 , TC = 25 ˚C
10 2 SPD09N05
tp = 2.5µs
A
10 1
10 µs
Drain current
ID = f (TC)
parameter: VGS 10 V
SPD09N05
11
A
9
8
7
6
5
4
3
2
1
00 20 40 60 80 100 120 140 160 ˚C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPD09N05
K/W
10 0
100 µs
10 -1
D = 0.50
0.20
10 0
1 ms
0.10
10 ms
DC
10 -2
single pulse
0.05
0.02
0.01
10
-1
10
-1
10 0
Data Sheet
10 1 V 10 2
VDS
5
10
-3
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
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