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1.5KE SERIES
Taiwan Semiconductor
CREAT BY ART
1500W, 6.8V - 440V Transient Voltage Suppressor
FEATURES
- Excellent clamping capability
- Low dynamic impedance
- 1500W surge capability at 10 / 1000 μs waveform
- Fast response time: Typically less than
1.0ps from 0 volt to VBR for unidirectional
and 5.0ns for bidirectional
- Typical IR less than 1μA above 10V
- UL recognized file # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: DO-201
Molding compound: UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight: 0.94g (approximately)
DO-201
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Peak power dissipation at TA=25°C, Tp=1ms (Note 1)
PPK
1500
Steady state power dissipation at TL=75°C
lead lengths .375", 9.5mm (Note 2)
PD
5
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Maximum Instantaneous Forward Voltage at 50 A for
Unidirectional Only (Note 3)
VF
3.5 / 5.0
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note 1: Non-repetitive current pulse per fig. 3 and derated above TA=25°C per fig. 2
Note 2: Mounted on copper pad area of 0.6" x 0.6" (16mm x 16mm)
Note 3: VF=3.5V for devices of VBR200V and VF=5.0V max. for devices VBR>200V
- 55 to +175
- 55 to +175
Devices for Bipolar Applications
1. For bidirectional use C or CA suffix for types 1.5KE6.8 - types 1.5KE440
2. Electrical characteristics apply in both directions
UNIT
W
W
A
V
°C
°C
ORDERING INFORMATION
PART NO.
1.5KExxxx
(Note 1)
PART NO.
SUFFIX
H
PACKING CODE
A0
R0
B0
PACKING CODE
SUFFIX
G
Note 1: "xxxx" defines voltage from 6.8V (1.5KE6.8) to 440V (1.5KE440)
PACKAGE
DO-201
DO-201
DO-201
PACKING
500 / Ammo box
1,250 / 13" Paper reel
500 / Bulk packing
EXAMPLE
EXAMPLE
PART NO.
1.5KE100AHR0G
PART NO.
1.5KE100A
PART NO.
SUFFIX
H
PACKING CODE
R0
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
Version: N1602

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CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted)
1.5KE SERIES
Taiwan Semiconductor
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
1
0.1
0.1
1 10 100 1000
tp, PULSE WIDTH, (μs)
10000
FIG.2 PULSE DERATING CURVE
125
With heat sink
100
75
50
25 Without heat sink
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
140
120
100
80
60
40
20
0
0
FIG. 3 CLAMPING POWER PULSE WAVEFORM
tr=10μs
Peak value
IPPM
Pulse width(td) is defined
as the point where the peak
current decays to 50% of IPPM
Half value-IPPM/2
10/1000μs, waveform
as defined by R.E.A.
td
0.5 1 1.5 2 2.5 3 3.5
t, TIME ms
4
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
200
180 8.3ms single half sine wave
160
140
120
100
80
60
40
20
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
10000
1000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
UNIDIRECTIONAL
BIDIRECTIONA
VR=0
100
f=1.0MHz
Vsig=50mVp-p
10
1
VR-rated
stand-off
voltage
10
V(BR), BREAKDOWN VOLTAGE (V)
100
Version: N1602

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CREAT BY ART
JEDEC GENERAL
TYPE
PART
NUMBER NUMBER
Nominal
Voltage
V
Breakdown Voltage
VBR (V)
(Note 1)
Min Max
1N6267 1.5KE6.8
6.8
6.12 7.48
1N6267A 1.5KE6.8A
6.8
6.45 7.14
1N6268 1.5KE7.5
7.5
6.75 8.25
1N6268A 1.5KE7.5A
7.5
7.13 7.88
1N6269 1.5KE8.2
8.2
7.38 9.02
1N6269A 1.5KE8.2A
8.2
7.79 8.61
1N6270 1.5KE9.1
9.1
8.19 10.00
1N6270A 1.5KE9.1A
9.1
8.65 9.55
1N6271 1.5KE10 10 9.00 11.00
1N6271A 1.5KE10A
10
9.50
10.5
1N6272 1.5KE11 11 9.90 12.1
1N6272A 1.5KE11A
11
10.5 11.6
1N6273 1.5KE12 12 10.8 13.2
1N6273A 1.5KE12A
12
11.4 12.6
1N6274 1.5KE13 13 11.7 14.3
1N6274A 1.5KE13A
13
12.4 13.7
1N6275 1.5KE15 15 13.5 16.5
1N6275A 1.5KE15A
15
14.3 15.8
1N6276 1.5KE16 16 14.4 17.6
1N6276A 1.5KE16A
16
15.2 16.8
1N6277 1.5KE18 18 16.2 19.8
1N6277A 1.5KE18A
18
17.1 18.9
1N6278 1.5KE20 20 18.0 22.0
1N6278A 1.5KE20A
20
19.0 21.0
1N6279 1.5KE22 22 19.8 24.2
1N6279A 1.5KE22A
22
20.9 23.1
1N6280 1.5KE24 24 21.6 26.4
1N6280A 1.5KE24A
24
22.8 25.2
1N6281 1.5KE27 27 24.3 29.7
1N6281A 1.5KE27A
27
25.7 28.4
1N6282 1.5KE30 30 27.0 33.0
1N6282A 1.5KE30A
30
28.5 31.5
1N6283 1.5KE33 33 29.7 36.3
1N6283A 1.5KE33A
33
31.4 34.7
1N6284 1.5KE36 36 32.4 39.6
1N6284A 1.5KE36A
36
34.2 37.8
1N6285 1.5KE39 39 35.1 42.9
1N6285A 1.5KE39A
39
37.1 41.0
1N6286 1.5KE43 43 38.7 47.3
1N6286A 1.5KE43A
43
40.9 45.2
1N6287 1.5KE47 47 42.3 51.7
1N6287A 1.5KE47A
47
44.7 49.4
1N6288 1.5KE51 51 45.9 56.1
1N6288A 1.5KE51A
51
48.5 53.6
1N6289 1.5KE56 56 50.4 61.6
1N6289A 1.5KE56A
56
53.2 58.8
1.5KE SERIES
Taiwan Semiconductor
Test
Current
IT
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
VWM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.20
10.50
11.10
12.10
12.80
12.90
13.60
14.50
15.30
16.20
17.10
17.80
18.80
19.40
20.50
21.80
23.10
24.30
25.60
26.80
28.20
29.10
30.80
31.60
33.30
34.80
36.80
38.10
40.20
41.30
43.60
45.40
47.80
Maximum
Reverse Leakage
@ VWM
IR (μA)
1000
1000
500
500
200
200
50
50
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Maximum
Maximum
Peak Pulse Clamping Voltage Temperature
Current IPPM
(A) (Note 2)
@ IPPM
Vc(V)
Coefficient
of VBR(%/°C)
145 10.8 0.057
150 10.5 0.057
134 11.7 0.061
139 11.3 0.061
126 12.5 0.065
130 12.1 0.065
114 13.8 0.068
117 13.4 0.068
105 15.0 0.073
108 14.5 0.073
97 16.2 0.075
100 15.6 0.075
91 17.3 0.078
94 16.7 0.078
82 19.0 0.081
86 18.2 0.081
71 22.0 0.084
74 21.2 0.084
67 23.5 0.086
70 22.5 0.086
59 26.5 0.088
60 25.5 0.088
54 29.1 0.090
56 27.7 0.090
49 31.9 0.092
51 30.6 0.092
45 34.7 0.094
47 33.2 0.094
40 39.1 0.096
42 37.5 0.096
36 43.5 0.097
38 41.4 0.097
33 47.7 0.098
34 45.7 0.098
30 52.0 0.099
31 49.9 0.099
27 56.4 0.100
29 53.9 0.100
25 61.9 0.101
26 59.3 0.101
23 67.8 0.101
24 64.8 0.101
21 73.5 0.102
22 70.1 0.102
19 80.5 0.103
20 77.0 0.103
Version: N1602

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JEDEC
TYPE
NUMBER
1N6290
1N6290A
1N6291
1N6291A
1N6292
1N6292A
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
GENERAL
PART
NUMBER
1.5KE62
1.5KE62A
1.5KE68
1.5KE68A
1.5KE75
1.5KE75A
1.5KE82
1.5KE82A
1.5KE91
1.5KE91A
1.5KE100
1.5KE100A
1.5KE110
1.5KE110A
1.5KE120
1.5KE120A
1.5KE130
1.5KE130A
1.5KE150
1.5KE150A
1.5KE160
1.5KE160A
1.5KE170
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A
1.5KE220
1.5KE220A
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
CREAT BY ART
Nominal
Voltage
Breakdown Voltage
VBR (V)
(Note 1)
V Min Max
62 55.8 68.2
62 58.9 65.1
68 61.2 74.8
68 64.6 71.4
75 67.5 82.5
75 71.3 78.8
82 73.8 90.2
82 77.9 86.1
91 81.9 100
91 86.5 95.5
100 90
110
100 95
105
110 99
121
110 105
116
120 108
132
120 114
126
130 117
143
130 124
137
150 135
165
150 143
158
160 144
176
160 152
168
170 153
187
170 162
179
180 162
198
180 171
189
200 180
220
200 190
210
220 198
242
220 209
231
250 225
275
250 237
263
300 270
330
300 285
315
350 315
385
350 333
368
400 360
440
400 380
420
440 396
484
440 418
462
1.5KE SERIES
Taiwan Semiconductor
Test
Current
IT
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-Off
Voltage
VWM
(V)
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
Maximum
Reverse Leakage
@ VWM
IR (μA)
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Maximum
Maximum
Maximum
Peak Pulse Clamping Voltage Temperature
Current IPPM
(A) (Note 2)
@ IPPM
Vc(V)
Coefficient
of VBR(%/°C)
17 89.0 0.104
18 85.0 0.104
16 98.0 0.104
17 92.0 0.104
14 108 0.105
15 103 0.105
13 118 0.105
13.9 113 0.105
12 131 0.106
12.6 125 0.106
10.9 144 0.106
11.4 137 0.106
9.9 158 0.107
10.3 152 0.107
9.1 173 0.107
9.5 165 0.107
8.4 187 0.107
8.7 179 0.107
7.3 215 0.108
7.6 207 0.108
6.8 230 0.108
7.1 219 0.108
6.4 244 0.108
6.7 234 0.108
6.1 258 0.108
6.4 246 0.108
5.4 287 0.108
5.7 274 0.108
4.5 344 0.110
4.8 328 0.110
4.3 360 0.110
4.5 344 0.110
3.6 430 0.110
3.8 414 0.110
3.1 504 0.110
3.2 482 0.110
2.7 574 0.110
2.8 548 0.110
2.4 631 0.110
2.5 602 0.110
Notes:
1. VBR measure after IT applied for 300 μs, IT=square wave pulse or equivalent.
2. Surge current waveform per figure. 3 and derate per figure. 2.
3. For bipolar types having VWM of 10 volts and under, the IR limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version: N1602

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CREAT BY ART
PACKAGE OUTLINE DIMENSIONS
DO-201
1.5KE SERIES
Taiwan Semiconductor
DIM.
A
B
C
D
E
Unit (mm)
Min
5.00
0.96
25.40
8.50
25.40
Max
5.60
1.06
-
9.50
-
Unit (inch)
Min
0.197
0.038
1.000
0.335
1.000
Max
0.220
0.042
-
0.375
-
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Note: Cathode band for uni-directional products only
Version: N1602