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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1410
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 250V(Min)
·Collector-Emitter Saturation Voltage-
:V CE(sat)= 2.0V(Max) @IC= 4A
·High DC Current Gain
: hFE= 2000(Min) @ IC= 2A, VCE= 2V
APPLICATIONS
·Igniter applications
·High voltage switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300 V
VCEO
Collector-Emitter Voltage
250 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
6A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
1A
2.0
W
30
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet-pdf.com/

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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1410
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A ; L= 40mH
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB=B 40mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB=B 40mA
ICBO Collector Cutoff Current
VCB= 300V; IE= 0
IEBO Emitter Cutoff Current
VEB= 5V; IC=0
hFE -1
DC Current Gain
IC= 2A ; VCE= 2V
hFE -2
DC Current Gain
IC= 4A ; VCE= 2V
COB Output Capacitance
Switching times
IE= 0 ; VCB= 10V; ftest=1MHz
ton Turn-on Time
tstg Storage Time
tf Fall Time
IC= 4A , IB1= -IB2= 40mA
RL= 25Ω; VCC= 100V
MIN TYP. MAX UNIT
250 V
2.0 V
2.5 V
500 μA
500 μA
2000
200
35 pF
1.0 μs
8.0 μs
5.0 μs
isc Websitewww.iscsemi.cn
2
Free Datasheet http://www.datasheet-pdf.com/

No Preview Available !

INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1410
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet-pdf.com/