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® X02xxxA
SENSITIVE GATE SCR
FEATURES
IT(RMS) = 1.25A
VDRM = 200V to 800V
Low IGT < 200 µA
DESCRIPTION
The X02xxxA series of SCRs uses a high
performance TOP GLASS PNPN technology.
These parts are intended for general purpose
applications where low gate sensitivity is required.
K
GA
TO92
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
IT(RM S)
IT( AV)
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Parameter
RMS on-state current
(180° conduction angle)
Tl= 60°C
Mean on-state current
(180° conduction angle)
Tl= 60°C
Non repetitive surge peak on-state current
(Tj initial = 25°C )
I2t Value for fusing
tp = 8.3 ms
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
IG = 10 mA diG /dt = 0.1 A/µs.
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10s at
2mm from case
Value
1.25
0.8
25
22.5
2.5
30
- 40, + 150
- 40, + 125
260
Unit
A
A
A
A2s
A/µs
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C RGK = 1K
Voltage
Unit
B DMN
200 400 600 800 V
January 1995
1/5
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X02xxxA
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a) Junction to ambient
Rth(j-l) Junction to leads for DC
Value
150
60
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 0.2 W PGM = 3 W (tp = 20 µs) IGM = 1.2 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
IGT
VGT
VGD
VRGM
tgd
IH
IL
VTM
IDRM
IRRM
dV/dt
tq
VD=12V (DC) RL=140
Tj= 25°C MIN
MAX
VD=12V (DC) RL=140
Tj= 25°C MAX
VD=VDRM RL=3.3k
RGK = 1 K
Tj= 125°C MIN
IRG =10µA
Tj= 25°C MIN
VD=VDRM ITM= 3 x IT(AV)
Tj= 25°C TYP
dIG/dt = 0.1A/µs IG = 10mA
IT= 50mA RGK = 1 K
Tj= 25°C MAX
IG=1mA RGK = 1 K
Tj= 25°C MAX
ITM= 2.5A tp= 380µs
Tj= 25°C MAX
VD = VDRM RGK = 1 K
VR = VRRM
Tj= 25°C MAX
Tj= 110°C MAX
VD=67%VDRM RGK = 1 KTj= 110°C TYP
ITM= 3 x IT(AV) VR=35V
dI/dt=10A/µs tp=100µs
dV/dt=2V/µs
VD= 67%VDRM RGK = 1 K
Tj= 110°C MAX
Sensitivity
02 03
20
200 200
0.8
0.1
05
20
50
8
0.5
5
6
1.45
5
200
15 20 15
100
Unit
µA
V
V
V
µs
mA
mA
V
µA
µA
V/µs
µs
ORDERING INFORMATION
X
SCR TOP GLASS
CURRENT
2/5
02 03 M
SENSITIVITY
®
A
PACKAGE :
A = TO92
VOLTAGE
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Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
X02xxxA
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Tlead).
P (W)
1.2
O
360
1.0
DC
0.8 = 180o
0.6 = 120o
= 90o
0.4 = 60o
0.2
0.0
0
= 30o
IT(AV)(A)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
P (W)
1.2
1.0
0.8 Rth(j-a)
0.6
0.4
0.2
0.0
0
Tamb (oC)
20 40 60
Rth( j- l)
Tlead (oC)
-50
-70
-90
-110
80 100 120 140
Fig.3 : Average on-state current versus lead tem-
perature.
I T(AV) (A)
1.4
1.2
DC
1.0
0.8
= 180o
0.6
0.4
0.2
0.0
0
Tlead (oC)
10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Zth(j-a)/Rth(j-a)
1.00
0.10
0.01
1E-3
1E-2
1E-1 1 E+0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
10. 0
9.0
Ih[Tj]
Ih[Tj=25 o C]
8.0
7.0
6.0
5.0 Igt
4.0
3.0
2.0 Ih
1.0
0.0
-40
Tj(oC)
-20 0 20
40
60
80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
25
20
Tj initial = 25oC
15
10
5
Number of cycles
0
1 10
100
100 0
3/5
®
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X02xxxA
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
I TSM (A). I2 t (A2s)
100
I TS M
10
I2 t
1
1
Tj initial = 25oC
tp(ms)
10
I TM (A)
100
Tj initial
25oC
10
Tj max
1 Tj max
Vto =1.05V
Rt =0.150
VTM(V)
0.1
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
4/5
®
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PACKAGE MECHANICAL DATA
TO92 (Plastic)
A
BC
F
D
E
Marking : Type number
Weight : 0.2 g
X02xxxA
DIMENSIONS
REF. Millimeters
Inches
Typ. Min. Max. Typ. Min. Max.
a A 1.35
0.053
B 4.7 0.185
C 2.54
0.100
D
4.4 4.8
0.173 0.189
E 12.7
0.500
F 3.7 0.146
a 0.45 0.017
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
© 1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
5/5
®
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