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STD11NM60N - STD11NM60N-1
STP11NM60N - STF11NM60N
N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK
Second generation MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STD11NM60N
STD11NM60N-1
STF11NM60N
STP11NM60N
650V
650V
650V
650V
<0.45Ω
<0.45Ω
<0.45Ω
<0.45Ω
10A
10A
10A (1)
10A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel
Description
This series of devices is realized with the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
2
1
IPAK
3
1
DPAK
3
2
1
TO-220FP
Internal schematic diagram
Order codes
Part number
STD11NM60N-1
STD11NM60N
STP11NM60N
STF11NM60N
Marking
D11NM60N
D11NM60N
P11NM60N
F11NM60N
Package
IPAK
DPAK
TO-220
TO-220FP
Packaging
Tube
Tape & reel
Tube
Tube
November 2006
Rev 2
1/17
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Contents
Contents
STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17
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STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
VISO
Tj
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Value
TO-220/
Unit
TO-220FP
DPAK/IPAK
600 V
± 25
10 10(1)
6.3 6.3 (1)
40 40(1)
V
A
A
A
100
0.8
15
25
0.2
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
TO-220 DPAK/IPAK TO-220FP Unit
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
Maximum lead temperature for soldering
purpose
1.25
62.5 100
300
5 °C/W
62.5 °C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
3.5
200
Unit
A
mJ
3/17
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Electrical characteristics
STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
dv/dt(1) Drain-source voltage slope
IDSS
Zero gate voltage drain
current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1mA, VGS= 0
Vdd=400V,Id=5A,
Vgs=10V
VDS=Max rating,
VDS=Max rating,Tc=125°C
VGS = ±20V
VDS= VGS, ID = 250µA
VGS= 10V, ID= 5A
600
2
45
3
0.37
V
V/ns
1 µA
10 µA
±100 nA
4V
0.45 Ω
1. Characteristics value at turn off on inductive load
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Forward transconductance VDS =15V, ID= 5A
ID = 10A
7.5 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =50V, f=1MHz, VGS=0
850
44
5
pF
pF
pF
Coss
(2)
eq.
Equivalent ouput
capacitance
VGS=0, VDS =0V to 480V
130 pF
f=1MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20mV
3.7 Ω
open drain
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD=480V, ID = 5A
VGS =10V
(see Figure 18)
31 nC
4.2 nC
15.9 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/17
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STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD=300V, ID=5A,
RG=4.7Ω, VGS=10V
(see Figure 17)
Min Typ Max Unit
22 ns
18.5 ns
50 ns
12 ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM
VSD(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 10A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=10A, di/dt =100A/µs,
VDD=100V, Tj=25°C
(see Figure 22)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VDD=100V
di/dt =100A/µs, ISD=10A
Tj=150°C (see Figure 22)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min Typ Max Unit
10
40
1.3
340
3.26
19.2
460
4.42
19.2
A
A
V
ns
µC
A
ns
µC
A
5/17
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