STD11NM60N - STD11NM60N-1 - STF11NM60N - STP11NM60N
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage (VGS=0)
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25°C
ID Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
VISO
Tj
Tstg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
Operating junction temperature
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤10A, di/dt ≤400A/µs, VDD =80% V(BR)DSS
Value
TO-220/
Unit
TO-220FP
DPAK/IPAK
600 V
± 25
10 10(1)
6.3 6.3 (1)
40 40(1)
V
A
A
A
100
0.8
15
25
0.2
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
TO-220 DPAK/IPAK TO-220FP Unit
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case Max
Thermal resistance junction-amb Max
Maximum lead temperature for soldering
purpose
1.25
62.5 100
300
5 °C/W
62.5 °C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
Single pulse avalanche energy
EAS (starting Tj=25°C, ID=IAS, VDD= 50V)
Max value
3.5
200
Unit
A
mJ
3/17
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