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Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
s Features
q High foward current transfer ratio hFE
q Satisfactory linearity of foward current transfer ratio hFE
q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to 2SD1259
base voltage 2SD1259A
VCBO
80
100
Collector to 2SD1259
emitter voltage 2SD1259A
VCEO
60
80
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
VEBO
ICP
IC
IB
PC
6
6
3
1
40
1.3
Junction temperature
Storage temperature
Tj 150
Tstg –55 to +150
Unit
V
V
V
A
A
A
W
˚C
˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff
2SD1259
current
2SD1259A
Collector cutoff current
Emitter cutoff current
Collector to emitter 2SD1259
voltage
2SD1259A
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICES
ICEO
IEBO
VCEO
hFE*
VCE(sat)
fT
VCE = 80V, IE = 0
VCE = 100V, IE = 0
VCE = 40V, IB = 0
VCB = 6V, IC = 0
IC = 25mA, IB = 0
VCE = 4V, IC = 0.5A
IC = 2A, IB = 0.05A
VCE = 12V, IC = 0.2A, f = 10MHz
*hFE Rank classification
Rank
Q
P
O
hFE 500 to 1000 800 to 1500 1200 to 2500
8.5±0.2
6.0±0.5
Unit: mm
3.4±0.3
1.0±0.1
1.5max.
0.8±0.1
2.54±0.3
5.08±0.5
123
8.5±0.2
6.0±0.3
1.1max.
0.5max.
1:Base
2:Collector
3:Emitter
N Type Package
Unit: mm
3.4±0.3
1.0±0.1
0.8±0.1
2.54±0.3
5.08±0.5
R0.5
R0.5
1.1 max.
0 to 0.4
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
min typ max Unit
100
µA
100
100 µA
100 µA
60
V
80
500 2500
1V
50 MHz
Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification.
1
Free Datasheet http://www.datasheetlist.com/

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Power Transistors
50
(1)
40
30
PC — Ta
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
1.0
IB=1.2mA
TC=25˚C
1.0mA
0.8
0.7mA
0.6mA
0.6
0.5mA
0.4mA
0.4
0.3mA
0.2mA
0.2
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD1259, 2SD1259A
IC — VBE
5
4 25˚C
TC=100˚C
–25˚C
3
2
1
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base to emitter voltage VBE (V)
VCE(sat) — IC
100
IC/IB=40
30
10
3 TC=100˚C
1 25˚C
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
hFE — IC
10000
3000 TC=100˚C
1000
25˚C
300
–25˚C
100
VCE=4V
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
10000
3000
1000
fT — IC
VCE=12V
f=10MHz
TC=25˚C
300
100
30
10
3
1
0.01 0.03 0.1 0.3 1 3
Collector current IC (A)
10
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3
IC
1
0.3
10ms
t=1ms
300ms
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
Rth(t) — t
103 (1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
102
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10 102 103 104
Time t (s)
2
Free Datasheet http://www.datasheetlist.com/