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SuperFETTM

FCP11N60F/FCPF11N60F

600V N-Channel MOSFET

Features

• 650V @TJ = 150°C

• Typ. RDS(on) = 0.32Ω

• Fast Recovery Type ( trr = 120ns)

• Ultra Low Gate Charge (typ. Qg = 40nC)

• Low Effective Output Capacitance (typ. Cosseff.=95pF)

• 100% avalanche tested

Description

SuperFETTM is, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

GDS

TO-220

Absolute Maximum Ratings

GD S

TO-220F

Symbol

Parameter

IDM

VGSS

EAS

IAR

EAR

dv/dt

Drain Current

- Continuous (TC = 25°C)

- Continuous (TC = 100°C)

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 1)

(Note 2)

(Note 1)

(Note 3)

PD Power Dissipation (TC = 25°C)

- Derate above 25°C

TJ, TSTG

Operating and Storage Temperature Range

TL Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

* Drain current limited by maximum junction termperature.

Thermal Characteristics

Symbol

RθJC

RθCS

RθJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

FCP11N60F FCPF11N60F

11 11 *

7 7*

33 33 *

± 30

340

12.5

4.5

125 36 *

1.0 0.29 *

-55 to +150

300

Units

V/ns

W/°C

°C

FCP11N60F

1.0

0.5

62.5

FCPF11N60F

3.5

62.5

Units

°C/W

FCP11N60F/FCPF11N60F Rev. A

www.fairchildsemi.com

Free Datasheet http://www.datasheetlist.com/

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Package Marking and Ordering Information

Device Marking

FCP11N60F

FCPF11N60F

Device

FCP11N60F

FCPF11N60F

Package

TO-220

TO-220F

Reel Size

Tape Width

Quantity

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min.

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

∆BVDSS/

∆TJ

BVDS

Breakdown Voltage Temperature

Coefficient

Drain-Source Avalanche Breakdown

Voltage

VGS = 0 V, ID = 250 µA, TJ = 25°C

VGS = 0 V, ID = 250 µA, TJ = 150°C

ID = 250 µA, Referenced to 25°C

VGS = 0 V, ID = 11 A

600

IDSS Zero Gate Voltage Drain Current

IGSSF

Gate-Body Leakage Current, Forward

IGSSR

Gate-Body Leakage Current, Reverse

On Characteristics

VGS(th)

RDS(on)

Gate Threshold Voltage

Static Drain-Source

On-Resistance

VDS = 600 V, VGS = 0 V

VDS = 480 V, TC = 125°C

VGS = 30 V, VDS = 0 V

VGS = -30 V, VDS = 0 V

VDS = VGS, ID = 250 µA

VGS = 10 V, ID = 5.5 A

3.0

gFS Forward Transconductance

Dynamic Characteristics

VDS = 40 V, ID = 5.5 A

(Note 4)

Ciss

Coss

Crss

Coss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

VDS = 480 V, VGS = 0 V,

f = 1.0 MHz

Coss eff. Effective Output Capacitance

Switching Characteristics

VDS = 0V to 480 V, VGS = 0 V

td(on)

Turn-On Delay Time

Turn-On Rise Time

VDD = 300 V, ID = 11 A,

RG = 25 Ω

td(off)

Turn-Off Delay Time

tf Turn-Off Fall Time

Qg Total Gate Charge

Qgs Gate-Source Charge

VDS = 480 V, ID = 11 A,

VGS = 10 V

Qgd Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

(Note 4, 5)

IS Maximum Continuous Drain-Source Diode Forward Current

ISM Maximum Pulsed Drain-Source Diode Forward Current

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A

trr Reverse Recovery Time

Qrr Reverse Recovery Charge

VGS = 0 V, IS = 11 A,

dIF / dt = 100 A/µs

(Note 4)

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Typ.

650

0.6

700

0.32

9.7

1148

671

119

7.2

120

0.8

Max. Units

100

-100

V/°C

µA

5.0

0.38

Ω

1490

870

80 ns

205 ns

250 ns

120 ns

52 nC

-- nC

11 A

33 A

1.4 V

-- ns

-- µC

FCP11N60F/FCPF11N60F Rev. A

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Typical Performance Characteristics

Figure 1. On-Region Characteristics

102

Top : 15.0 V

10.0 V

8.0 V

7.0 V

101

6.5 V

6.0 V

Bottom : 5.5 V

100

* Notes :

1. 250 µs Pulse Test

2. T = 25oC

10-1

10-1 100 101

V , Drain-Source Voltage [V]

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

1.0

0.8

V = 10V

0.6

0.4

V = 20V

0.2

0.0

* Note : T = 25oC

5 10 15 20 25 30 35 40

I , Drain Current [A]

Figure 5. Capacitance Characteristics

6000

5000

4000

3000

2000

1000

10-1

C = C + C (C = shorted)

iss gs gd ds

C =C +C

oss ds gd

C =C

rss gd

oss

iss

rss

* Notes :

1. V = 0 V

2. f = 1 MHz

100 101

V , Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

101

150oC

100

25oC

-55oC

10-1

* Note

1. V = 40V

2. 250 µs Pulse Test

468

V , Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperatue

101

100

10-1

0.2

150 oC

25 oC

* Notes :

1. V = 0V

2. 250 µs Pulse Test

0.4 0.6 0.8 1.0 1.2 1.4 1.6

V , Source-Drain Voltage [V]

Figure 6. Gate Charge Characteristics

V = 100V

V = 250V

V = 400V

* Note : I = 11A

0 5 10 15 20 25 30 35 40 45

Q , Total Gate Charge [nC]

FCP11N60F/FCPF11N60F Rev. A

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Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation

vs. Temperature

1.2

1.1

1.0

0.9

0.8

-100

* Notes :

1. V = 0 V

250

µA

-50 0 50 100 150

T , Junction Temperature [oC]

200

Figure 9-1. Safe Operating Area

for FCP11N60F

Figure 8. On-Resistance Variation

vs. Temperature

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-100

* Notes :

1. V = 10 V

2. I = 5.5 A

-50 0 50 100 150

T , Junction Temperature [oC]

200

Figure 9-2. Safe Operating Area

for FCPF11N60F

102 Operation in This Area

is Limited by R

DS(on)

101

100

100 us

1 ms

10 ms

102 Operation in This Area

is Limited by R

DS(on)

101

100

100 us

1 ms

10 ms

100 ms

* Notes :

10-1 1. T = 25 oC

2. T = 150 oC

3. Single Pulse

* Notes :

10-1 1. T = 25 oC

2. T = 150 oC

3. Single Pulse

10-2

100

101 102

V , Drain-Source Voltage [V]

103

10-2

100

Figure 10. Maximum Drain Current vs. Case Temperature

101 102

V , Drain-Source Voltage [V]

103

12.5

10.0

7.5

5.0

2.5

0.0

50 75 100 125

T , Case Temperature [oC]

150

FCP11N60F/FCPF11N60F Rev. A

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Typical Performance Characteristics (Continued)

Figure 11-1. Transient Thermal Response Curve for FCP11N60F

100

D =0.5

0 .2

1 0 -1

0.1

0 .0 5

0 .0 2

0 .0 1

1 0 -2

1 0 -5

* N otes :

1. Z (t) = 1.0 oC /W M ax.

θJC

2. D uty F actor, D =t /t

3. T - T = P * Z (t)

JM C

DM θJC

single pulse

PDM

1 0-4

1 0 -3

1 0 -2

1 0 -1

100

t , S q u a re W a ve P u ls e D u ra tio n [s e c]

101

Figure 11-2. Transient Thermal Response Curve for FCPF11N60F

D =0 .5

100

0 .2

0.1

0.05

1 0 -1

0.02

0.01

* N otes :

1. Z (t) = 3 .5 oC /W M ax.

θJC

2. D u ty F actor, D =t /t

3. T - T = P * Z (t)

JM C

DM θJC

1 0 -2

1 0 -5

sing le p uls e

PDM

1 0 -4

1 0 -3

1 0 -2

1 0 -1

100

t , S q u a re W a ve P u lse D u ra tio n [s e c]

101

FCP11N60F/FCPF11N60F Rev. A

www.fairchildsemi.com

Free Datasheet http://www.datasheetlist.com/