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SuperFETTM
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.32
• Fast Recovery Type ( trr = 120ns)
• Ultra Low Gate Charge (typ. Qg = 40nC)
• Low Effective Output Capacitance (typ. Cosseff.=95pF)
• 100% avalanche tested
Description
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
GDS
TO-220
Absolute Maximum Ratings
GD S
TO-220F
D
!
"
!"
G!
"
"
!
S
Symbol
Parameter
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
FCP11N60F FCPF11N60F
11 11 *
7 7*
33 33 *
± 30
340
11
12.5
4.5
125 36 *
1.0 0.29 *
-55 to +150
300
Units
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FCP11N60F
1.0
0.5
62.5
FCPF11N60F
3.5
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
FCP11N60F/FCPF11N60F Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/

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Package Marking and Ordering Information
Device Marking
FCP11N60F
FCPF11N60F
Device
FCP11N60F
FCPF11N60F
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS/
TJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
VGS = 0 V, ID = 250 µA, TJ = 25°C
VGS = 0 V, ID = 250 µA, TJ = 150°C
ID = 250 µA, Referenced to 25°C
VGS = 0 V, ID = 11 A
600
--
--
--
IDSS Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.5 A
--
--
--
--
3.0
--
gFS Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 5.5 A
(Note 4)
--
Ciss
Coss
Crss
Coss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 480 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
--
Coss eff. Effective Output Capacitance
Switching Characteristics
VDS = 0V to 480 V, VGS = 0 V
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300 V, ID = 11 A,
RG = 25
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
VDS = 480 V, ID = 11 A,
VGS = 10 V
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
(Note 4, 5)
(Note 4, 5)
--
--
--
--
--
--
--
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/µs
(Note 4)
--
--
--
--
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 11A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ.
--
650
0.6
700
--
--
--
--
--
0.32
9.7
1148
671
63
35
95
34
98
119
56
40
7.2
21
--
--
--
120
0.8
Max. Units
--
--
--
--
10
100
100
-100
V
V
V/°C
V
µA
µA
nA
nA
5.0
0.38
--
V
S
1490
870
82
--
--
pF
pF
pF
pF
pF
80 ns
205 ns
250 ns
120 ns
52 nC
-- nC
-- nC
11 A
33 A
1.4 V
-- ns
-- µC
FCP11N60F/FCPF11N60F Rev. A
2
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/

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Typical Performance Characteristics
Figure 1. On-Region Characteristics
102
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.5 V
6.0 V
Bottom : 5.5 V
100
* Notes :
1. 250 µs Pulse Test
2. T = 25oC
C
10-1
10-1 100 101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1.0
0.8
V = 10V
GS
0.6
0.4
V = 20V
GS
0.2
0.0
0
* Note : T = 25oC
J
5 10 15 20 25 30 35 40
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
6000
5000
4000
3000
2000
1000
0
10-1
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
C
oss
C
iss
C
rss
* Notes :
1. V = 0 V
GS
2. f = 1 MHz
100 101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
101
150oC
100
25oC
-55oC
10-1
2
* Note
1. V = 40V
DS
2. 250 µs Pulse Test
468
V , Gate-Source Voltage [V]
GS
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150 oC
25 oC
* Notes :
1. V = 0V
GS
2. 250 µs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V , Source-Drain Voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
V = 250V
DS
V = 400V
DS
8
6
4
2
* Note : I = 11A
D
0
0 5 10 15 20 25 30 35 40 45
Q , Total Gate Charge [nC]
G
FCP11N60F/FCPF11N60F Rev. A
3
www.fairchildsemi.com
Free Datasheet http://www.datasheetlist.com/