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STW11NK90Z
N-channel 900V - 0.82- 9.2A - TO-247
Zener-protected SuperMESH™ Power MOSFET
General features
Type
STW11NK90Z
VDSS
900V
RDS(on)
<0.98
ID Pw
9.2A 200W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeability
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage Power MOSFETs including revolutionary
MDmesh™ products
Applications
Switching application
TO-247
Internal schematic diagram
Order codes
Part number
STW11NK90Z
Marking
W11NK90Z
Package
TO-247
Packaging
Tube
July 2006
Rev 2
1/12
www.st.com
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Contents
Contents
STW11NK90Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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STW11NK90Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VDGR
VGS
ID
ID
IDM(1)
PTOT
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20K)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating factor
VESD(G-D) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt(2) Peak diode recovery voltage slope
TJ Operating junction temperature
Tstg Storage temperature
1. Pulse width limited by safe operating area
2. ISD < 9.2A, di/dt < 200A/µs, VDD =80%V(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-a
Tl
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
900
900
± 30
9.2
5.8
36.8
200
1.51
6000
4.5
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
°C
Value
0.66
50
300
Unit
°C/W
°C/W
°C
Value
9.2
400
Unit
A
mJ
3/12
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