J6806D.pdf 데이터시트 (총 5 페이지) - 파일 다운로드 J6806D 데이타시트 다운로드

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FJAF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color TV
1 TO-3PF
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
B
50typ.
E
Rating
1500
750
6
6
12
50
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Base-Emitter Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VF Damper Diode Turn On Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=300mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=1A
IC=4A, IB=1A
IF = 4.5A
VCC=200V, IC=4A, RL=50
IB1=1.0A, IB2= - 2.0A
40
6
8
4
1 mA
10 µA
200 mA
V
7
5V
1.5 V
2V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
2.5
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
Free Datasheet http://www.0PDF.com

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Typical Characteristics
8
7
IB = 2.0A
6
5
IB = 0.8A
4 IB = 0.6A
3 IB = 0.4A
2 IB = 0.2A
1
0
0 2 4 6 8 10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
I =5I
CB
1
0.1
Ta = 125oC
Ta = - 25oC
Ta = 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
10
V =5V
CE
8
6
Ta = 25 oC
4
2 Ta = 125 oC
Ta = - 25 oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE [V], BASE-EMITTER ON VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
100
Ta = 125oC
Ta = 25oC
10
Ta = - 25oC
V = 5V
CE
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
I =3I
CB
1
0.1
Ta = 125oC
Ta = 25oC
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
tSTG
1
V = 200V,
CC
I = 4A, I = 1A
C B1
0.1
1
tF
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, July 2002
Free Datasheet http://www.0PDF.com

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Typical Characteristics (Continued)
10
V = 200V,
CC
I = 4A, I = - 2A
C B2
1
tSTG
tF
0.1
1
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time
15
R = 0, I = 15A
B2 B1
V
CC
=
30V,
L
=
200µH
12
9
6
VBE(off) = -3V
3
1
10
100
1000
10000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 9. Reverse Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC [oC], CASE TEMPERATURE
Figure 11. Power Derating
©2002 Fairchild Semiconductor Corporation
tSTG
1
tF
0.1
1
V = 200V,
CC
I = 1A,I = - 2A
B1 B2
IC [A], COLLECTOR CURRENT
10
Figure 8. Resistive Load Switching Time
100
IC (Pulse)
10
t = 100ms
IC (DC)
t = 10ms
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
VCE [V], COLECTOR-EMITTER VOLTAGE
Figure 10. Forward Bias Safe Operating Area
Rev. A, July 2002
Free Datasheet http://www.0PDF.com