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FJAF6806D
High Voltage Color Display Horizontal
Deflection Output (Damper Diode Built In)
• High Collector-Base Breakdown Voltage : BVCBO = 1500V
• High Switching Speed : tF(typ.) =0.1µs
• For Color TV
1 TO-3PF
1.Base 2.Collector 3.Emitter
Equivalent Circuit
C
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP* Collector Current (Pulse)
PC Collector Dissipation
TJ Junction Temperature
TSTG
Storage Temperature
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
B
50typ.
E
Rating
1500
750
6
6
12
50
150
-55 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
ICES
Collector Cut-off Current
ICBO
Collector Cut-off Current
IEBO
Emitter Cut-off Current
BVEBO
Base-Emitter Breakdown Voltage
hFE1
hFE2
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
VF Damper Diode Turn On Voltage
tSTG*
Storage Time
tF* Fall Time
* Pulse Test: PW=20µs, duty Cycle=1% Pulsed
VCB=1400V, RBE=0
VCB=800V, IE=0
VEB=4V, IC=0
IE=300mA, IC=0
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB=1A
IC=4A, IB=1A
IF = 4.5A
VCC=200V, IC=4A, RL=50
IB1=1.0A, IB2= - 2.0A
40
6
8
4
1 mA
10 µA
200 mA
V
7
5V
1.5 V
2V
3 µs
0.2 µs
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
RθjC
Thermal Resistance, Junction to Case
Typ
Max
2.5
Units
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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Typical Characteristics
8
7
IB = 2.0A
6
5
IB = 0.8A
4 IB = 0.6A
3 IB = 0.4A
2 IB = 0.2A
1
0
0 2 4 6 8 10
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
10
I =5I
CB
1
0.1
Ta = 125oC
Ta = - 25oC
Ta = 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 3. Collector-Emitter Saturation Voltage
10
V =5V
CE
8
6
Ta = 25 oC
4
2 Ta = 125 oC
Ta = - 25 oC
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VBE [V], BASE-EMITTER ON VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
100
Ta = 125oC
Ta = 25oC
10
Ta = - 25oC
V = 5V
CE
1
0.1 1 10
IC [A], COLLECTOR CURRENT
Figure 2. DC current Gain
10
I =3I
CB
1
0.1
Ta = 125oC
Ta = 25oC
Ta = - 25oC
0.01
0.1
1
IC [A], COLLECTOR CURRENT
10
Figure 4. Collector-Emitter Saturation Voltage
tSTG
1
V = 200V,
CC
I = 4A, I = 1A
C B1
0.1
1
tF
IB2 [A], REVERSE BASE CURRENT
Figure 6. Resistive Load Switching Time
Rev. A, July 2002
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Typical Characteristics (Continued)
10
V = 200V,
CC
I = 4A, I = - 2A
C B2
1
tSTG
tF
0.1
1
IB1 [A], FORWARD BASE CURRENT
Figure 7. Resistive Load Switching Time
15
R = 0, I = 15A
B2 B1
V
CC
=
30V,
L
=
200µH
12
9
6
VBE(off) = -3V
3
1
10
100
1000
10000
V [V], COLLECTOR-EMITTER VOLTAGE
CE
Figure 9. Reverse Bias Safe Operating Area
80
70
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175 200
TC [oC], CASE TEMPERATURE
Figure 11. Power Derating
©2002 Fairchild Semiconductor Corporation
tSTG
1
tF
0.1
1
V = 200V,
CC
I = 1A,I = - 2A
B1 B2
IC [A], COLLECTOR CURRENT
10
Figure 8. Resistive Load Switching Time
100
IC (Pulse)
10
t = 100ms
IC (DC)
t = 10ms
t = 1ms
1
0.1
T = 25oC
C
Single Pulse
0.01
1
10
100
1000
10000
VCE [V], COLECTOR-EMITTER VOLTAGE
Figure 10. Forward Bias Safe Operating Area
Rev. A, July 2002
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Package Demensions
TO-3PF
15.50 ±0.20
ø3.60 ±0.20
5.50 ±0.20
3.00 ±0.20
(1.50)
0.85 ±0.03
2.00 ±0.20
2.00 ±0.20
4.00 ±0.20
0.75
+0.20
–0.10
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
5.45TYP
[5.45 ±0.30]
2.00 ±0.20
3.30 ±0.20
0.90
+0.20
–0.10
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. A, July 2002
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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. H7
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