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60V N-Channel MOSFET
Applications:
Power Supply
DC-DC Converters
MXP6006DT, MXP6006DF Datasheet
VDS
60V
RDS(ON)(MAX)
6mΩ
IDa
115A
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Charge for Fast Switching Application
Optimized V(BR)DSS Capability
Ordering Information
Park Number
Package
MXP6006DT
TO-220
MXP6006DF
TO-263
Brand
MXP
MXP
TO-263
Absolute Maximum Ratings
Symbol
TC=25unless otherwise specified
Parameter
Value
VDSS Drain-to-Source Voltage
IDa Continuous Drain Current
IDM Pulsed Drain Current @VG=10V
60
115
459
PD
Power Dissipation
Derating Factor above 25
158
1.05
VGS Gate-to-Source Voltage
+/-20
EAS
Single Pulse Avalanche Energy
(L=1mH)
449
IAS Pulsed Avalanche Energy
Figure 9
Tj and Tstg Operating Junction and Storage Temperature Range
-55 to 175
Unit
V
A
W
W/
V
mJ
A
Thermal Resistance
Symbol
Parameter
RθJC Junction-to-Case
Min Typ Max Unit
Test Conditions
Water cooled heatsink, PD
- - 0.95 /W adjusted for a peak junction
Temperature of 175
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175. Package limitation current is 80A.
©MaxPower Semiconductor Inc.
MXP6006DT Ver 1.0 Sep. 2011
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OFF Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
V(BR)DSS Drain-to-Source Breakdown Voltage
60
-
-V
IDSS Drain-to-Source Leakage Current
-
-
-
-
1
100
uA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-
-
-
-
100
100
nA
Test Conditions
VGS=0V, ID=250uA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, TJ=125
VGS=+20V
VGS= -20V
ON Characteristics
Symbol
Parameter
TJ=25unless otherwise specified
Min Typ Max Unit
RDS(ON) Static Drain-to-Source On-Resistance
-
4.6 6.0 m
VGS(th) Gate Threshold Voltage.
2 - 4V
Test Conditions
VGS=10V, ID=24A
VGS=VDS, ID=250uA
Dynamic Characteristics
Symbol
Parameter
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Essentially independent of operating temperature
Min Typ Max Unit
Test Conditions
- 5117
- 534
-
-
pF
VGS=0V, VDS=25V,
f=1.0MHz
- 185
-
- 68
-
- 25
- nC VDD=30V, ID=57A, VGS=10V
- 16
-
- 18
-
- 43
- 46
-
-
nS
VDD=30V, ID=57A,
VG=10V, RG=2.5
- 13
-
Source-Drain Diode CharacteristicsTJ=25unless otherwise specified
Symbol
Parameter
Min Typ Max Unit
VSD Diode Forward Voltage
- - 1.2 V
Trr Reverse Recovery Time
- - 108.3 nS
Qrr Reverse Recovery Charge
- - 85.4 nC
Test Conditions
IS=24A, VGS=0V
Is=38A, di/dt=100A/μs
Published by MaxPower Semiconductor Inc.
4800 Great America Parkway, Suite# 205, Santa Clara, CA 95054
©MaxPower Semiconductor Inc.
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Figure 1. Maximum Power Dissipation
V.S Case Temperature
160
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC, Case Temperature()
Figure 3. Typical Output Characteristics
120
100 VGS=10,9..6 V
80
60
40
20 VGS=5V
0
0 0.5 1 1.5 2
VDS, Drain-to Source Voltage(A)
Figure 5. Threshold Voltage V.S Junction
Temperature
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
-75 -25 25 75 125 175
TJ, Junction Temperature()
Figure 2. Maximum Continuous Drain
Current V.S Case Temperature
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC, Case Temperature()
Figure 4. Breakdown Voltage V.S
Junction Temperature
1.13 ID=5mA
1.08
1.03
0.98
0.93
0.88
-75
-25 25 75 125
TJ, Junction Temperature()
175
Figure 6. Drain-to-Source Resistance V.S
Junction Temperature
2.20
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
-75 -25 25 75 125 175
TJ, Junction Temperature()
©MaxPower Semiconductor Inc.
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Figure 7. Typical Gate Charge vs. Gate-
to-Source Voltage
10
9
8
7
6
5
4
3
2
1
0
0 10 20 30 40 50 60
Qgate, Gate Charge(nC)
70
Figure 9. Unclamped Inductive
Switching Capability
1000
Starting TJ=25
100
Figure 8. Typical Capacitance vs. Drain-
7000 to-Source Voltage
6000
5000
CISS
4000
3000
2000
1000
COSS
CRSS
0
0 15 30 45 60
VDS, Drain Voltage(V)
Figure 10. Source-Drain Diode Forward
Voltage
100
10 TJ=25
TJ=175
10
1
1.E-05
1.E-04
1.E-03
1.E-02
tAV, Time in Avalanche(s)
1.E-01
1
0
0.00
VGS=0
0.40 0.80
VSD, Source-to-Drain Voltage(V)
1.20
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