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N-Channel 100-V (D-S) MOSFET
ME15N10/ME15N10-G
GENERAL DESCRIPTION
The ME15N10 is the N-Channel logic enhancement mode power
field effect transistors, using high cell density, DMOS trench
technology. This high density process is especially tailored to
minimize on state resistance. These devices are particularly suited
for low voltage application such as cellular phone, notebook
computer power management and other battery powered circuits,
and low in-line power loss that are needed in a very small outline
surface mount package.
FEATURES
RDS(ON)100mΩ@VGS=10V
Super high density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
Power Management in Note book
DC/DC Converter
Load Switch
LCD Display inverter
PIN CONFIGURATION
(TO-252-3L)
Top View
e Ordering Information: ME15N10 (Pb-free)
ME15N10-G (Green product-Halogen free)
Absolute Maximum Ratings (TA=25Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TC=25
Current(Tj=150)
TC=70
Pulsed Drain Current
Maximum Power Dissipation
TC=25
TC=70
Operating Junction Temperature
Thermal Resistance-Junction to Case *
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
RθJC
Rating
100
±20
14.7
13.6
59
34.7
22.2
-55 to 150
3.6
* The device mounted on 1in2 FR4 board with 2 oz copper
Dec,2009-Ver1.0
Unit
V
V
A
A
W
℃/W
01Free Datasheet http://www.Datasheet4U.com

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ME15N10/ME15N10-G
N-Channel 100-V (D-S) MOSFET
Electrical Characteristics (TA =25Unless Otherwise Specified)
Symbol Parameter
Limit
Min Typ Max
STATIC
BVDSS
VGS(th)
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
100
1
3
IGSS
IDSS
RDS(ON)
Gate Leakage Current
Zero Gate Voltage Drain Current
Drain-Source On-Resistance a
VDS=0V, VGS=±20V
VDS=80V, VGS=0V
VGS=10V, ID= 8A
±100
1
80 100
VSD Diode Forward Voltage
IS=8A, VGS=0V
0.9 1.2
DYNAMIC
Qg Total Gate Charge
VDS=80V, VGS=10V, ID=10A
24
Qg Total Gate Charge
13
Qgs Gate-Source Charge
VDS=80V, VGS=4.5V, ID=10A
4.6
Qgd Gate-Drain Charge
7.6
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=15V, VGS=0V,
f=1MHz
890
58
23
Rg
td(on)
tr
td(off)
Gate-Resistance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
VDS=0V, VGS=0V, f=1MHz
VDS=50V, RL =5Ω,
VGEN=10V, RG=1Ω
0.9
14
33
39
tf Turn-Off Fall Time
5
Notes: a. Pulse test: pulse width300us, duty cycle2%,Guaranteed by design, not subject to production testing.
b. Matsuki reserves the right to improve product design, functions and reliability without notice.
Unit
V
V
nA
μA
mΩ
V
nC
pF
Ω
ns
Dec,2009-Ver1.0
02Free Datasheet http://www.Datasheet4U.com

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N-Channel 100-V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME15N10/ME15N10-G
Dec,2009-Ver1.0
03Free Datasheet http://www.Datasheet4U.com

No Preview Available !

N-Channel 100-V (D-S) MOSFET
Typical Characteristics (TJ =25Noted)
ME15N10/ME15N10-G
Dec,2009-Ver1.0
04Free Datasheet http://www.Datasheet4U.com